Method of producing GaAs single crystals doped with boron
AssigneeSumitomo Electric Industries, Ltd.
InventorShin-ichi Akai
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Abstract
GaAs single crystals doped with boron and having a lowered dislocation density are grown from a GaAs melt covered with B.sub.2 O.sub.3 melt as a liquid encapsulant. The method comprises using a crucible made of a material selected from the group consisting of PBN, AlN and Al.sub.2 O.sub.3 as a crucible for holding the GaAs melt, adding 0.25 to 0.95 atomic percent of boron to the GaAs melt under conditions such that the residual oxygen quantity is at most 5.times.10.sup.-2 mole percent to the GaAs melt, and thereby adjusting the concentration of boron in the grown crystal to 2.times.10.sup.18 to 1.times.10.sup.19 atoms per cm.sup.3. The method is applied to an LE-VB method and an LE-VGF method as well as an LEC method.
Claims12
In a method of producing GaAs single crystals doped with boron and having a lowered dislocation density from a GaAs melt covered with B.sub.2 O.sub.3 melt as a liquid encapsulant, the improvement comprising:
- using a crucible made of a material selected from the group consisting of PBN, AlN and Al.sub.2 O.sub.3 as a crucible for holding the GaAs melt, adding 0.25 to 0.95 atomic percent of boron to said GaAs melt under conditions such that the residual oxygen quantity is at most 5.times.10.sup.-2 mole percent to said GaAs melt, thereby adjusting the concentration of boron in the grown crystal to 2.times.10.sup.18 to 1.times.10.sup.19 atoms per cm.sup.3.
Dependencies are inferred from the claim text.