Large-scale compound semiconductor single crystal growth system and method

A large-size single crystal growth system, comprising a crucible, two or more main body columns, a main furnace body disposed between the main body columns and located on a support table,

• wherein the system further comprises a crystal growth space control device and a raw material injection device within the furnace body, the raw material injection device comprising a plurality of raw material loading and injection systems independent to each other;
• the crystal growth space control device comprises 1-4 movable furnace bodies disposed on an inner side or outer side of the main furnace body, the movable furnace bodies being disposed on the main body columns by means of drive motors and drive arms;
• and a top of the innermost or outermost movable furnace body is sealed, the other movable furnaces are open cylinders, and a seed crystal rod and a seed crystal rod driving device are disposed on the movable furnace with the top sealed;
• the raw material injection device is disposed on a partition, and comprises an annular raw material water cooling disc and raw material loading and injection systems;
• raw material slots are uniformly disposed on the raw material water cooling disc;
• the raw material loading and injection system includes a raw material loader, a resistance wire disposed around the raw material loader, a raw material injection tube in communication with the raw material loader, and a raw material loader top cover;
• the raw material loading and injection system is inserted into the raw material slot, and the raw material injection tube protrudes from an injection tube groove;
• 6 to 12 raw material slots are provided;
• and
• 2 lengths are set for the raw material injection tube, the outlet of which is higher than or lower than the liquid level of the melt in the crystal growth process, respectively.