Low etch pit density gallium arsenide crystals with boron dopant

Abstract

Methods and systems for low etch pit density gallium arsenide crystals with boron dopant may include a gallium arsenide single crystal wafer having boron as a dopant, an etch pit density of less than 500 cm−2, and optical absorption of 6 cm−1 or less at 940 nm. The wafer may have an etch pit density of less than 200 cm−2. The wafer may have a diameter of 6 inches or greater. The wafer may have a boron concentration between 1×1019 cm−3 and 2×1019 cm−3. The wafer may have a thickness of 300 μm or greater. Optoelectronic devices may be formed on a first surface of the wafer, which may be diced into a plurality of die and optical signals from an optoelectronic device on one side of one of the die may be communicated out a second side of the die opposite to the one side.

Dependencies are inferred from the claim text.