C30B 1/02
Single-crystal growth directly from the solid state: by thermal treatment
Official title: by thermal treatment, e.g. strain annealing (C30B1/12 takes precedence)
C30B1/02 (Single-crystal growth directly from the solid state: by thermal treatment) appears on 430 US grants and 429 published applications in this corpus.
Search patents in C30B- Granted patents
- 430
- Published applications
- 429
- Assignees
- 293
- Inventors
- 1,176
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 4 | 0 |
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 12 | 0 |
| 1983 | 12 | 0 |
| 1984 | 9 | 0 |
| 1985 | 2 | 0 |
| 1986 | 7 | 0 |
| 1987 | 4 | 0 |
| 1988 | 2 | 0 |
| 1989 | 2 | 0 |
| 1990 | 7 | 0 |
| 1991 | 4 | 0 |
| 1992 | 4 | 0 |
| 1993 | 2 | 0 |
| 1994 | 8 | 0 |
| 1995 | 5 | 0 |
| 1996 | 4 | 0 |
| 1997 | 3 | 0 |
| 1998 | 6 | 0 |
| 1999 | 7 | 0 |
| 2000 | 5 | 0 |
| 2001 | 9 | 4 |
| 2002 | 10 | 19 |
| 2003 | 10 | 14 |
| 2004 | 15 | 18 |
| 2005 | 12 | 22 |
| 2006 | 9 | 5 |
| 2007 | 8 | 8 |
| 2008 | 8 | 12 |
| 2009 | 6 | 11 |
| 2010 | 8 | 14 |
| 2011 | 12 | 15 |
| 2012 | 7 | 9 |
| 2013 | 8 | 24 |
| 2014 | 11 | 16 |
| 2015 | 13 | 21 |
| 2016 | 14 | 26 |
| 2017 | 25 | 38 |
| 2018 | 23 | 16 |
| 2019 | 21 | 17 |
| 2020 | 11 | 13 |
| 2021 | 12 | 22 |
| 2022 | 9 | 9 |
| 2023 | 16 | 17 |
| 2024 | 15 | 24 |
| 2025 | 14 | 20 |
| 2026 | 10 | 15 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Synthesis of single-crystal nickel-rich cathode materials using flame-assisted spray pyrolysis15 Sep 2026US 12,735,800 B2Massachusetts Institute of Technology
- Patterned aluminum nitride composite substrate and preparation method thereof25 Aug 2026US 12,716,146 B2Peking University
- Single crystal multi-element cathode material, preparation method of the same, and lithium-ion battery19 May 2026US 12,633,527 B2Beijing Easpring Material Technology Co., Ltd.
- Fluorite-based material thin film and semiconductor device comprising the same5 May 2026US 12,617,695 B2Samsung Electronics Co., Ltd.
- Method of manufacturing semiconductor device, semiconductor device, and apparatus employing the same28 Apr 2026US 12,615,974 B2Samsung Electronics Co., Ltd.
- Fluorite-based material thin film and semiconductor device comprising the same27 Aug 2026US 2026/0250147 A1Samsung Electronics Co., Ltd.
- Optical device and method of manufacture23 Jul 2026US 2026/0211183 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Single-crystal ternary cathode material, preparation method therefor, cathode electrode sheet, and battery23 Jul 2026US 2026/0213186 A1Guangdong Brunp Recycling Technology Co., Ltd.
- Aln single crystal substrate16 Jul 2026US 2026/0201608 A1NGK Insulators, Ltd.
- Method for producing aln single crystal substrate and aln single crystal substrate9 Jul 2026US 2026/0193809 A1NGK Insulators, Ltd.
Most cited
By later US patents
- LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film3,969US 7,323,356 B2Japan Science and Technology Agency · 2008
- Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film658US 8,202,365 B2FUJIFILM Corporation · 2012
- Heat treatment machine for semiconductors401US 4,581,520 A1986
- Thin film transistor having crystalline semiconductor layer obtained by irradiation223US 5,656,825 ASemiconductor Energy Laboratory Co.Ltd. · 1997
- Method of crystallizing amorphous material with a moving energy beam218US 4,309,225 AMassachusetts Institute of Technology · 1982