Aln single crystal substrate
AssigneeNGK Insulators, Ltd.
InventorsKyohei ATSUJI, Hiroharu KOBAYASHI, Yosuke SATO
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Abstract
There is provided an AlN single crystal substrate, which is composed of an AlN single crystal and has a size with a diameter of 100 mm or more.
Claims8
An AlN single crystal substrate composed of an AlN single crystal and having a size with a diameter of 100 mm or more,
- wherein an X-ray rocking curve full width at half maximum of a (002) plane of the AlN single crystal on at least one surface of the AlN single crystal substrate is 20 to 350 arcsec.
An AlN single crystal substrate composed of an AlN single crystal and having a size with a diameter of 100 mm or more,
- wherein an X-ray rocking curve full width at half maximum of a (102) plane of the AlN single crystal on at least one surface of the AlN single crystal substrate is 20 to 500 arcsec.
An AlN single crystal substrate composed of an AlN single crystal and having a size with a diameter of 100 mm or more,
- wherein at least one surface of the AlN single crystal substrate has a defect density of 1.0×103 to 1.0×10 cm−2.
An AlN single crystal substrate composed of an AlN single crystal and having a size with a diameter of 150 mm or more.
Dependencies are inferred from the claim text.