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US 2026/0193809 A1Published application
Method for producing aln single crystal substrate and aln single crystal substrate
AssigneeNGK Insulators, Ltd.
InventorsKyohei ATSUJI, Hiroharu KOBAYASHI, Yosuke SATO
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Abstract
There is provided a method for producing an AlN single crystal substrate including the steps of providing an AlN bonded body composed of an AlN seed crystal and an AlN sintered body; and subjecting the AlN bonded body to a heat treatment to grow an AlN single crystal from the AlN seed crystal.
Claims9
A method for producing an AlN single crystal substrate, comprising the steps of:
- providing an AlN bonded body composed of an AlN seed crystal and an AlN sintered body;
- and
- subjecting the AlN bonded body to a heat treatment to grow an AlN single crystal from the AlN seed crystal.
Dependencies are inferred from the claim text.