C30B 1/04
Isothermal recrystallisation
C30B1/04 (Isothermal recrystallisation) appears on 53 US grants and 62 published applications in this corpus.
Search patents in C30B- Granted patents
- 53
- Published applications
- 62
- Assignees
- 55
- Inventors
- 183
- Latest grant
- 30 Dec 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 1 | 2 |
| 2005 | 0 | 1 |
| 2006 | 1 | 0 |
| 2007 | 0 | 0 |
| 2008 | 1 | 3 |
| 2009 | 1 | 5 |
| 2010 | 1 | 1 |
| 2011 | 2 | 2 |
| 2012 | 2 | 0 |
| 2013 | 0 | 5 |
| 2014 | 1 | 5 |
| 2015 | 3 | 4 |
| 2016 | 3 | 8 |
| 2017 | 10 | 7 |
| 2018 | 6 | 3 |
| 2019 | 4 | 0 |
| 2020 | 1 | 3 |
| 2021 | 1 | 5 |
| 2022 | 2 | 4 |
| 2023 | 5 | 1 |
| 2024 | 3 | 3 |
| 2025 | 4 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Purification method for copper foil30 Dec 2025US 12,509,792 B2Songshan Lake Materials Laboratory
- Ground substrate and method for producing same8 Jul 2025US 12,351,941 B2NGK Insulators, Ltd.
- Gradient single-crystal positive electrode material, and preparation method therefor and use thereof4 Feb 2025US 12,215,437 B2Henan Kelong New Energy Co., Ltd
- Method for clonal-growth of single-crystal metal7 Jan 2025US 12,188,150 B2Peking University
- Ground substrate and method for producing same10 Dec 2024US 12,163,249 B2NGK Insulators, Ltd.
- Purification method for copper foil3 Oct 2024US 2024/0328026 A1Songshan Lake Materials Laboratory
- Monocrystalline metal foil and manufacturing method therefor8 Aug 2024US 2024/0263262 A1Institute for Basic Science
- Gradient Single-Crystal Positive Electrode Material, And Preparation Method Therefor and UseThereof11 Apr 2024US 2024/0117520 A1Henan Kelong New Energy Co., Ltd
- Method for manufacturing sputtering target, method for forming oxide film, and transistor17 Aug 2023US 2023/0260785 A1Semiconductor Energy Laboratory Co., Ltd.
- Method for clonal-growth of single-crystal metal5 May 2022US 2022/0136134 A1Peking University
Most cited
By later US patents
- Systems and methods for inducing crystallization of thin films using multiple optical paths38US 7,318,866 B2The Trustees of Columbia University in the City of New York · 2008
- Hyperelastic shape setting devices and fabrication methods15US 7,842,143 B2TiNi Alloy Company · 2010
- Method for growing single crystals of metals14US 7,922,812 B2Intellectual Ventures Holding 40 LLC · 2011
- Method of converting PCA to sapphire and converted article13US 8,157,912 B2Osram Sylvania Inc. · 2012
- Process for low temperature stoichiometric recrystallization of compound semiconductor films12US 4,095,004 AHughes Aircraft Company · 1978