C23C 14/5826
Treatment with charged particles
Official title: {Treatment with charged particles (C23C14/582 takes precedence)}
C23C14/5826 (Treatment with charged particles) appears on 309 US grants and 363 published applications in this corpus.
Search patents in C23C- Granted patents
- 309
- Published applications
- 363
- Assignees
- 244
- Inventors
- 1,014
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 0 | 0 |
| 1987 | 4 | 0 |
| 1988 | 4 | 0 |
| 1989 | 4 | 0 |
| 1990 | 2 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 2 | 0 |
| 1994 | 3 | 0 |
| 1995 | 0 | 0 |
| 1996 | 2 | 0 |
| 1997 | 3 | 0 |
| 1998 | 7 | 0 |
| 1999 | 5 | 0 |
| 2000 | 9 | 0 |
| 2001 | 7 | 3 |
| 2002 | 7 | 7 |
| 2003 | 4 | 15 |
| 2004 | 7 | 15 |
| 2005 | 10 | 16 |
| 2006 | 7 | 17 |
| 2007 | 7 | 13 |
| 2008 | 2 | 10 |
| 2009 | 4 | 7 |
| 2010 | 13 | 29 |
| 2011 | 7 | 13 |
| 2012 | 13 | 24 |
| 2013 | 16 | 9 |
| 2014 | 12 | 14 |
| 2015 | 7 | 12 |
| 2016 | 11 | 15 |
| 2017 | 12 | 19 |
| 2018 | 12 | 17 |
| 2019 | 10 | 14 |
| 2020 | 16 | 17 |
| 2021 | 15 | 16 |
| 2022 | 9 | 22 |
| 2023 | 10 | 15 |
| 2024 | 13 | 11 |
| 2025 | 15 | 9 |
| 2026 | 8 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Film forming method and film forming apparatus6 Oct 2026US 12,753,485 B2Tokyo Electron Limited
- Oxide film preparation method26 May 2026US 12,637,754 B2Beijing Naura Microelectronics Equipment Co., Ltd.
- Method and device for producing layered nanocarbon structures19 May 2026US 12,630,430 B2Lion Alternative Energy PLC
- Coated tool12 May 2026US 12,623,292 B2MOLDINO Tool Engineering, Ltd.
- Film forming apparatus, control apparatus for film forming appartus, and film forming method21 Apr 2026US 12,606,904 B2Canon Anelva Corporation
- Methods and systems for filling a gap13 Aug 2026US 2026/0239900 A1ASM IP Holding B. V.
- Method, control device, computer program and storage medium30 Apr 2026US 2026/0117367 A1Von Ardenne Asset GmbH & Co. KG
- High aspect ratio gap fill using cyclic deposition and etch5 Mar 2026US 2026/0062792 A1APPLIED Materials.Inc.
- Method of manufacturing plasma-resistant multilayer coating film29 Jan 2026US 2026/0028710 A1Green Resource Co., Ltd.
- Methods of forming stable conductive surfaces11 Dec 2025US 2025/0376773 A1Northwestern University
Most cited
By later US patents
- System and method for forming a gate dielectric598US 6,858,547 B2APPLIED Materials.Inc. · 2005
- Low-temperature grown high-quality ultra-thin praseodymium gate dielectrics139US 6,900,122 B2Micron Technology, Inc. · 2005
- Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics116US 6,953,730 B2Micron Technology, Inc. · 2005
- Lanthanide doped TiOx dielectric films by plasma oxidation106US 7,026,694 B2Micron Technology, Inc. · 2006
- Methods for manufacturing solid state ionic devices99US 5,171,413 ATufts University · 1992