High aspect ratio gap fill using cyclic deposition and etch
AssigneeApplied Materials, Inc.
InventorsAlexia Adilene PORTILLO RIVERA, Takashi KURATOMI
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Abstract
Embodiment of the present disclosure generally relate to optical device structures and methods for forming a metal containing interconnection structure in a high aspect ratio gap on a substrate for an optical device. In one embodiment, the method includes providing a substrate having a gap in a material layer disposed on a substrate, depositing a gap fill material in an opening of the gap, etching the gap fill material to remove portions of the gap fill material deposited in the gap, and cyclically depositing more of the gap fill material in the opening of the gap to completely fill the gap.
Claims20
A method for forming an optical device structure, comprising:
- providing a substrate having a gap in a material layer disposed over a top surface of the substrate;
- depositing a gap fill material over the material layer and in an opening of the gap in the material layer;
- etching the gap fill material to remove portions of the gap fill material deposited in the gap;
- and
- depositing more of the gap fill material in the opening of the gap to completely fill the gap.
The method in claim 4, wherein etching the gap fill material comprises using a pre-cleaning chamber and flowing a processing gas into the pre-cleaning chamber to ignite a plasma, wherein the processing gas comprises at least one of an argon, oxygen, or nitrogen containing gas.
A method for forming an optical device structure on a substrate, comprising:
- disposing a substrate having a gap in a material layer disposed over the substrate into a first process chamber of a cluster processing system;
- performing a deposition process using the first process chamber to deposit a gap fill material in an opening of the gap in the material layer;
- transferring the substrate to a second process chamber of the cluster processing system;
- performing an etch process using the second process chamber to remove portions of the gap fill material deposited in the gap on the substrate;
- transferring the substrate to the first process chamber of the cluster processing system;
- and
- performing a deposition process to deposit more of the gap fill material in the opening of the gap to completely fill the gap.
An optical device structure, comprising:
- a material layer disposed over a substrate, the material layer having a gap formed therein extending from a top surface of the material layer towards the substrate;
- a gap fill material disposed over the material layer and in the gap, the gap fill material completely filling the gap to form an interconnection structure in the material layer, wherein the interconnection structure is formed in the material layer by:
- depositing the gap fill material over the material layer and in the gap to partially fill the gap;
- etching the gap fill material to remove portions of the gap fill material deposited in the gap;
- continuing to cyclically deposit more of the gap fill material in the gap and etch portions of the gap fill material deposited in the gap to incrementally fill the gap with the gap fill material;
- and
- depositing more of the gap fill material in the gap to completely fill the gap.
Dependencies are inferred from the claim text.