B81C 2201/0122
Selective addition
B81C2201/0122 (Selective addition) appears on 6 US grants and 8 published applications in this corpus.
Search patents in B81C- Granted patents
- 6
- Published applications
- 8
- Assignees
- 8
- Inventors
- 21
- Latest grant
- 20 Jan 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 0 | 1 |
| 2003 | 2 | 1 |
| 2004 | 0 | 0 |
| 2005 | 0 | 1 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 1 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 1 |
| 2014 | 1 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 0 | 0 |
| 2021 | 0 | 1 |
| 2022 | 1 | 0 |
| 2023 | 1 | 1 |
| 2024 | 0 | 0 |
| 2025 | 0 | 0 |
| 2026 | 1 | 1 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Preventing electrode discontinuation on microdevice sidewall20 Jan 2026US 12,532,724 B2VueReal Inc.
- Method for manufacturing an etch stop layer and MEMS sensor comprising an etch stop layer7 Feb 2023US 11,572,271 B2Ams AG
- Method for manufacturing an etch stop layer and MEMS sensor comprising an etch stop layer27 Dec 2022US 11,535,512 B2Ams AG
- High aspect ratio MEMS devices and methods for forming the same9 Sep 2014US 8,828,772 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method of fabricating micro-electromechanical switches on CMOS compatible substrates21 Oct 2003US 6,635,506 B2International Business Machines Corporation
- Preventing electrode discontinuation on microdevice sidewall14 May 2026US 2026/0136906 A1VueReal Inc.
- Preventing electrode discontinuation on microdevice sidewall18 May 2023US 2023/0154790 A1VueReal Inc.
- Method for manufacturing an etch stop layer and mems sensor comprising an etch stop layer15 Jul 2021US 2021/0214216 A1Ams AG
- High aspect ratio mems devices and methods for forming the same5 Sep 2013US 2013/0230939 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Electrochemical Fabrication Methods Incorporating Dielectric Materials and/or Using Dielectric Substrates2 Jul 2009US 2009/0165295 A1Microfabrica Inc.
Most cited
By later US patents