Method for manufacturing an etch stop layer and MEMS sensor comprising an etch stop layer
AssigneeAms AG
InventorsAlessandro Faes, Sophie Guillemin, Joerg Siegert, Karl Tuttner
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Abstract
The disclosure relates to a method for manufacturing a planarized etch-stop layer, ESL, for a hydrofluoric acid, HF, vapor phase etching process. The method includes providing a first planarized layer on top of a surface of a substrate, the first planarized layer having a patterned and structured metallic material and a filling material. The method further includes depositing on top of the first planarized layer the planarized ESL of an ESL material with low HF etch rate, wherein the planarized ESL has a low surface roughness and a thickness of less than 150 nm, in particular of less than 100 nm.
Claims14
A method for manufacturing a planarized etch-stop layer, ESL, suitable for a hydrofluoric acid, HF, vapor phase etching process, the method comprising
- providing a first layer with a planar surface on top of a surface of a substrate, the first layer with a planar surface comprising a patterned and structured metallic material and a filling material;
- and
- depositing on top of the first layer with a planar surface an ESL layer with a planar surface of an ESL material, the ESL material being an etch stop material regarding HF;
- wherein the ESL layer with a planar surface has a thickness of less than 150 nm;
- wherein
- wherein the method is part of a CMOS-compatible fabrication process
- wherein the first layer with a planar surface on the substrate is provided by:
- depositing a first material on top of the surface of the substrate;
- patterning and structuring the first material;
- depositing a second material on top of the first material, and exposed parts of the surface of the substrate;
- and
- performing chemical-mechanical planarization, CMP;
- and
- wherein a CMP ESL material is arranged between the first material and the second material, with the CMP ESL material being an etch stop material regarding CMP.
A method for manufacturing a planarized etch-stop layer, ESL, suitable for a hydrofluoric acid, HF, vapor phase etching process, the method comprising:
- providing a first planarized layer on top of a surface of a substrate, the first planarized layer comprising a patterned and structured metallic material and a filling material;
- and
- depositing on top of the first planarized layer an ESL layer with a planar surface of an ESL material, the ESL material being an etch stop material regarding HF;
- wherein the ESL layer with a planar surface has a thickness of less than 150 nm;
- wherein the method is part of a CMOS-compatible fabrication process;
- and
- wherein the first planarized layer on the substrate is provided by:
- depositing a first material on top of a surface of the substrate;
- depositing a sacrificial material on top of the first material;
- patterning and structuring the first material and the sacrificial material;
- depositing a second material on top of the structured sacrificial material and exposed parts of the surface of the substrate;
- and
- performing wet-etching of the sacrificial material.
Dependencies are inferred from the claim text.