Method for manufacturing an etch stop layer and mems sensor comprising an etch stop layer
AssigneeAms AG
InventorsAlessandro FAES, Sophie GUILLEMIN, Joerg SIEGERT, Karl TUTTNER
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Abstract
The disclosure relates to a method for manufacturing a planarized etch-stop layer, ESL, for a hydrofluoric acid, HF, vapor phase etching process. The method includes providing a first planarized layer on top of a surface of a substrate, the first planarized layer having a patterned and structured metallic material and a filling material. The method further includes comprises depositing on top of the first planarized layer the planarized ESL of an ESL material with low HF etch rate, wherein the planarized ESL has a low surface roughness and a thickness of less than 150 nm, in particular of less than 100 nm.
Claims17
A method for manufacturing a planarized etch-stop layer, ESL, suitable for a hydrofluoric acid, HF, vapor phase etching process, the method comprising
- providing a first planarized layer on top of a surface of a substrate, the first planarized layer comprising a patterned and structured metallic material and a filling material;
- and
- depositing on top of the first planarized layer a planarized ESL of an ESL material with low HF etch rate;
- wherein the planarized ESL has a thickness of less than 150 nm, in particular of less than 100 nm.
A capacitive MEMS sensor comprising
- a substrate, in particular a CMOS substrate;
- a first planarized layer arranged on a surface of the substrate, the first planarized layer comprising
- a structured metallic material;
- and
- a filling material in voids of the structured metallic material;
- on top of the first planarized layer a planarized etch stop layer, ESL, of an ESL material with low HF etch rate, wherein the ESL has a thickness of less than 150 nm, in particular less than 100 nm;
- and
- a suspended layer of a structured second metallic material above the ESL.
Dependencies are inferred from the claim text.