B81C 1/00063
Trenches
Official title: {Trenches}
B81C1/00063 (Trenches) appears on 68 US grants and 83 published applications in this corpus.
Search patents in B81C- Granted patents
- 68
- Published applications
- 83
- Assignees
- 54
- Inventors
- 195
- Latest grant
- 16 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 1 | 2 |
| 2005 | 0 | 2 |
| 2006 | 0 | 1 |
| 2007 | 1 | 4 |
| 2008 | 2 | 1 |
| 2009 | 2 | 1 |
| 2010 | 1 | 1 |
| 2011 | 0 | 3 |
| 2012 | 1 | 8 |
| 2013 | 5 | 5 |
| 2014 | 4 | 0 |
| 2015 | 6 | 3 |
| 2016 | 2 | 3 |
| 2017 | 4 | 6 |
| 2018 | 5 | 4 |
| 2019 | 2 | 7 |
| 2020 | 9 | 5 |
| 2021 | 4 | 7 |
| 2022 | 3 | 5 |
| 2023 | 7 | 6 |
| 2024 | 3 | 3 |
| 2025 | 3 | 3 |
| 2026 | 2 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Wafer level proximity sensor and method of making same16 Jun 2026US 12,655,017 B2STMicroelectronics International N. V.
- MEMS with over-voltage protection12 May 2026US 12,623,900 B1SiTime Corporation
- High rate printing of microscale and nanoscale patterns using interfacial convective assembly16 Sep 2025US 12,415,721 B2Northeastern University
- 3D nanochannel interleaved devices28 Jan 2025US 12,208,386 B2International Business Machines Corporation
- Method for etching gaps of unequal width7 Jan 2025US 12,187,605 B2Murata Manufacturing Co., Ltd.
- Wafer level proximity sensor and method of making same1 Oct 2026US 2026/0296880 A1STMicroelectronics International N. V.
- Method for singulating a wafer and suitable device21 May 2026US 2026/0138869 A1Carl Zeiss SMT GmbH
- Method of manufacturing a layered structure for a mems apparatus and mems apparatus having such a layered structure26 Feb 2026US 2026/0054980 A1OQmented GmbH
- Micro-electromechanical system device including a precision proof mass element and methods for forming the same13 Nov 2025US 2025/0346482 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for manufacturing member with recess structure and member with recess structure3 Jul 2025US 2025/0215319 A1AGC Inc.
Most cited
By later US patents
- Boron nitride membrane in wafer structure and process of forming the same39US 5,066,533 AThe Perkin-Elmer Corporation · 1991
- Method of making a nanogap for variable capacitive elements, and device having a nanogap21US 7,172,917 B2Robert Bosch GmbH · 2007
- Method of fabricating semiconductor device including forming a protective layer and removing after etching a trench16US 7,622,394 B2Oki Semiconductor Co., Ltd. · 2009
- Wide and narrow trench formation in high aspect ratio MEMS14US 7,405,099 B2Freescale Semiconductor, Inc. · 2008
- Gap tuning for surface micromachined structures in an epitaxial reactor7US 6,808,953 B2Robert Bosch GmbH · 2004