Method of making a nanogap for variable capacitive elements, and device having a nanogap

A method for fabricating a variable capacitive device, comprising:

• providing a first silicon-bearing electrode on a substrate;
• applying a sacrificial layer directly on the first silicon-bearing electrode, the sacrificial layer being applied in a vertically-inclined manner with respect to the substrate;
• providing a second silicon-bearing electrode directly on the sacrificial layer;
• and
• removing the sacrificial layer from between the first silicon-bearing electrode and the second silicon-bearing electrode;
• wherein at least one of the first and second silicon-bearing electrodes is a movable electrode;
• wherein the providing of the first silicon-bearing electrode further includes depositing epipoly to form a first silicon-bearing layer and etching the first silicon-bearing layer to define the first silicon-bearing electrode;
• and
• wherein the providing of the second silicon-bearing electrode further includes:
• depositing epipoly to form a second silicon-bearing layer on the sacrificial layer;
• etching the second silicon-bearing layer to define the second silicon-bearing electrode;
• and
• before the etching of the second silicon-bearing layer, planarizing the second silicon-bearing layer down to a level of the first silicon-bearing electrode.