Yield Microelectronics Corp.
Zhubei City, TW· latest recorded location
Yield Microelectronics Corp. is named on 28 US grants and 35 published applications in this corpus. Its most frequent classification is G11C (Static stores).
- Granted patents
- 28
- Published applications
- 35
- Inventors
- 18
- Granted in 2026 so far
- 2
- Most recent grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2005 | 0 | 1 |
| 2006 | 1 | 0 |
| 2007 | 0 | 1 |
| 2008 | 1 | 0 |
| 2009 | 1 | 1 |
| 2010 | 0 | 0 |
| 2011 | 0 | 2 |
| 2012 | 4 | 4 |
| 2013 | 0 | 2 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 3 | 3 |
| 2017 | 1 | 0 |
| 2018 | 1 | 0 |
| 2019 | 1 | 1 |
| 2020 | 3 | 3 |
| 2021 | 1 | 3 |
| 2022 | 3 | 2 |
| 2023 | 1 | 2 |
| 2024 | 0 | 1 |
| 2025 | 5 | 5 |
| 2026 | 2 | 4 |
By publication year. 2026 runs to 8 Oct.
Technology areas
Share of 63 documents
- G11CStatic stores49
- H10BElectronic memory devices43
- H10DInorganic electric semiconductor devices23
- H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by10
- Y02DClimate change mitigation technologies in information and communication technologies [ict], i.e. information4
- H10PGeneric processes or apparatus for the manufacture or treatment of devices covered3
- H02MApparatus for conversion between ac and ac, between ac and dc, or2
- H03KPulse technique1
Recent patents
- Low-power programmable erasable nonvolatile memory6 Oct 2026US 12,755,787 B2
- High-speed multi-write read only memory array10 Mar 2026US 12,575,094 B2
- Multi-write read-only memory array14 Oct 2025US 12,444,444 B2
- Small-area common-voltage multi-write non-volatile memory array14 Oct 2025US 12,446,219 B2
- Small-area common-voltage anti-fuse array10 Jun 2025US 12,327,597 B2
- Methods for operating a non-volatile memory array and a non-volatile memory cell for improving writing efficiency and erasing efficiency17 Sep 2026US 2026/0279464 A1
- Read-only memory array for reducing the layout areas of capacitors and read-only memory thereof20 Aug 2026US 2026/0245598 A1
- Low-power programmable erasable nonvolatile memory30 Apr 2026US 2026/0120769 A1
- Read-only memory array and read-only memory thereof8 Jan 2026US 2026/0013120 A1
- Multi-write read-only memory array and read-only memory thereof19 Jun 2025US 2025/0203858 A1
Most cited
By later US patents
- Nonvolatile flash memory and method of operating the same45US 7,099,192 B22006
- Single-gate non-volatile memory and operation method thereof28US 7,423,903 B22008
- Non-volatile memory low voltage and high speed erasure method7US 8,218,369 B22012
- Low-voltage EEPROM array6US 8,305,808 B22012
- Method for operating low-cost EEPROM array3US 9,240,242 B12016