Small-area common-voltage multi-write non-volatile memory array

A small-area common-voltage multi-write non-volatile memory array comprising:

• a plurality of word lines, arranged in parallel, comprising a first word line and a second word line;
• a plurality of select lines arranged in parallel, wherein the plurality of select lines perpendicular to the plurality of word lines comprise a first select line;
• a plurality of common-voltage lines arranged in parallel, wherein the plurality of common-voltage lines perpendicular to the plurality of select lines are directly coupled together, the plurality of common-voltage lines comprise a first common-voltage line and a second common-voltage line, and the first word line and the second word line are respectively close to the first common-voltage line and the second common-voltage line, wherein the first word line and the second word line are arranged between the first common-voltage line and the second common-voltage line;
• and
• a plurality of sub-memory arrays each coupled to two of the plurality of word lines, one of the plurality of select lines, and two of the plurality of common-voltage lines, wherein each of the plurality of sub-memory arrays comprises:
• a first non-volatile memory cell coupled to the first word line, the first select line, and the first common-voltage line;
• and
• a second non-volatile memory cell coupled to the second word line, the first select line, and the second common-voltage line.