Y10S 438/981
Utilizing varying dielectric thickness
Y10S438/981 (Utilizing varying dielectric thickness) appears on 526 US grants and 190 published applications in this corpus.
Search patents in Y10S- Granted patents
- 526
- Published applications
- 190
- Assignees
- 160
- Inventors
- 818
- Latest grant
- 18 Aug 2015
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 6 | 0 |
| 1978 | 3 | 0 |
| 1979 | 3 | 0 |
| 1980 | 2 | 0 |
| 1981 | 4 | 0 |
| 1982 | 6 | 0 |
| 1983 | 5 | 0 |
| 1984 | 6 | 0 |
| 1985 | 3 | 0 |
| 1986 | 3 | 0 |
| 1987 | 5 | 0 |
| 1988 | 6 | 0 |
| 1989 | 4 | 0 |
| 1990 | 2 | 0 |
| 1991 | 10 | 0 |
| 1992 | 15 | 0 |
| 1993 | 15 | 0 |
| 1994 | 24 | 0 |
| 1995 | 17 | 0 |
| 1996 | 30 | 0 |
| 1997 | 31 | 0 |
| 1998 | 21 | 0 |
| 1999 | 22 | 0 |
| 2000 | 29 | 0 |
| 2001 | 31 | 7 |
| 2002 | 35 | 24 |
| 2003 | 26 | 26 |
| 2004 | 32 | 33 |
| 2005 | 22 | 16 |
| 2006 | 16 | 23 |
| 2007 | 19 | 23 |
| 2008 | 13 | 13 |
| 2009 | 19 | 10 |
| 2010 | 18 | 6 |
| 2011 | 8 | 4 |
| 2012 | 5 | 2 |
| 2013 | 0 | 0 |
| 2014 | 2 | 1 |
| 2015 | 2 | 2 |
By publication year. Applications have been published since 2001.
Recent patents
- Method of forming a CMOS structure having gate insulation films of different thicknesses18 Aug 2015US 9,111,909 B2Tessera Advanced Technologies, Inc.
- Method for manufacturing semiconductor device19 May 2015US 9,034,709 B2Asahi Kasei Microdevices Corporation
- Self-aligned multi-dielectric-layer lift off process for laser diode stripes20 May 2014US 8,728,842 B2Soraa Laser Diode, Inc.
- Method of forming a CMOS structure having gate insulation films of different thicknesses18 Mar 2014US 8,674,419 B2Renesas Electronics Corporation
- Method of fabricating semiconductor device comprises a photoresist pattern having a desired critical dimension31 Jul 2012US 8,232,199 B2Samsung Electronics Co., Ltd.
- Method of forming a cmos structure having gate insulation films of different thicknesses10 Dec 2015US 2015/0357248 A1Tessera Advanced Technologies, Inc.
- Method for manufacturing semiconductor device22 Jan 2015US 2015/0024564 A1Asahi Kasei Microdevices Corporation
- Method of forming a cmos structure having gate insulation films of different thicknesses11 Sep 2014US 2014/0252495 A1Renesas Electronics Corporation
- Self-Aligned Multi-Dielectric-Layer Lift Off Process for Laser Diode Stripes12 Jul 2012US 2012/0178198 A1Soraa, Inc.
- Method of fabricating semiconductor device and fabrication system of semiconductor device5 Jan 2012US 2012/0003761 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Self-aligned multi-dielectric-layer lift off process for laser diode stripes231US 8,143,148 B1Soraa, Inc. · 2012
- Process for forming gate oxides possessing different thicknesses on a semiconductor substrate214US 5,918,116 ALucent Technologies Inc. · 1999
- Silicon carbide semiconductor device208US 5,976,936 ADenso Corporation · 1999
- Method of fabricating thin film semiconductor integrated circuit182US 5,620,905 ASemiconductor Energy Laboratory Co.Ltd. · 1997
- Method of producing a thin silicon-on-insulator layer164US 5,234,535 AInternational Business Machines Corporation · 1993