Method of fabricating semiconductor device comprises a photoresist pattern having a desired critical dimension
AssigneeSamsung Electronics Co., Ltd.
InventorsWon Song, Byung-Goo Jeon
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Abstract
A method of fabricating a semiconductor device and a fabrication system of the semiconductor device are provided. The method includes sequentially forming a film to be etched and a dielectric film and measuring a thickness of the dielectric film, forming a photoresist film on the dielectric film, performing a lithography process using the measured thickness of the dielectric film to form a photoresist film pattern, and etching the dielectric film and the film to be etched using the photoresist film pattern.
Claims5
A method of fabricating a semiconductor device comprising:
- sequentially forming a film to be etched and a dielectric film and measuring a thickness D of the dielectric film;
- forming a photoresist film on the dielectric film;
- performing a lithography process using the measured thickness D of the dielectric film to form a photoresist film pattern by adjusting exposure energy, exposure time, and/or focal depth in the lithography process based on the measured thickness D of the dielectric film;
- wherein a critical dimension of the photoresist film pattern increases as the thickness of the dielectric film becomes increased;
- and
- etching the dielectric film and the film to be etched using the photoresist film pattern.
A method of method of fabricating a semiconductor device comprising:
- sequentially forming a film to be etched and a dielectric film and measuring a thickness D of the dielectric film;
- forming a photoresist film on the dielectric film;
- performing a lithography process using the measured thickness D of the dielectric film to form a photoresist film pattern by adjusting exposure energy, exposure time, and/or focal depth in the lithography process based on the measured thickness D of the dielectric film;
- etching the dielectric film and the film to be etched using the photoresist film pattern, wherein when the dielectric film has a first thickness, the photoresist pattern has a first critical dimension, and when the dielectric film has a second thickness, the photoresist pattern has a second critical dimension;
- and
- wherein the second critical dimension of the photoresist pattern increases as the thickness of the dielectric film becomes increased.
Dependencies are inferred from the claim text.