Method of fabricating semiconductor device and fabrication system of semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsWon Song, Byung-Goo Jeon
Life of this patent
Estimating the term…
Abstract
A method of fabricating a semiconductor device and a fabrication system of the semiconductor device are provided. The method includes sequentially forming a film to be etched and a dielectric film and measuring a thickness of the dielectric film, forming a photoresist film on the dielectric film, performing a lithography process using the measured thickness of the dielectric film to form a photoresist film pattern, and etching the dielectric film and the film to be etched using the photoresist film pattern.
Claims10
A method of fabricating a semiconductor device comprising:
- sequentially forming a film to be etched and a dielectric film and measuring a thickness of the dielectric film;
- forming a photoresist film on the dielectric film;
- performing a lithography process using the measured thickness of the dielectric film to form a photoresist film pattern;
- and
- etching the dielectric film and the film to be etched using the photoresist film pattern.
A method of method of fabricating a semiconductor device comprising:
- sequentially forming a film to be etched and a dielectric film and measuring a thickness of the dielectric film;
- forming a photoresist film on the dielectric film;
- performing a lithography process using the measured thickness of the dielectric film to form a photoresist film pattern;
- and
- etching the dielectric film and the film to be etched using the photoresist film pattern, wherein When the dielectric film has a first thickness, the photoresist pattern has a first critical dimension, and when the dielectric film has a second thickness, the photoresist pattern has a second critical dimension.
A fabrication system of a semiconductor device comprising:
- a film forming system of forming a film to be etched, a dielectric film and a photoresist film on a substrate;
- a thickness metrology system of measuring thicknesses of the dielectric film;
- a lithography system of firming a photoresist film pattern process using the photoresist film;
- a control system of controlling processing parameters of the lithography system using data on the measured thicknesses of the dielectric film;
- and
- an etching system of etching the dielectric film and the film to be etched using the photoresist film pattern.
Dependencies are inferred from the claim text.