Method of forming a cmos structure having gate insulation films of different thicknesses
AssigneeTessera Advanced Technologies, Inc.
InventorsNozomu MATSUZAKI, Hiroyuki MIZUNO, Masashi HORIGUCHI
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Abstract
The semiconductor integrated circuit device employs on the same silicon substrate a plurality of kinds of MOS transistors with different magnitudes of tunnel current flowing either between the source and gate or between the drain and gate thereof. These MOS transistors include tunnel-current increased MOS transistors at least one of which is for use in constituting a main circuit of the device. The plurality of kinds of MOS transistors also include tunnel-current reduced or depleted MOS transistors at least one of which is for use with a control circuit. This control circuit is inserted between the main circuit and at least one of the two power supply units.
Claims20
A method of manufacturing a semiconductor device for fabrication of a plurality of metal oxide semiconductor (MOS) transistors having gate insulation films different in thickness on the same silicon substrate, wherein the gate insulation films of different thicknesses are formed separately.
A method of manufacturing a semiconductor device for fabrication of a plurality of MOS transistors having gate insulation films different in thickness on the same silicon substrate, wherein a gate insulation film less in thickness is formed prior to formation of a gate insulation film greater in thickness.
A method of manufacturing a semiconductor device comprising on the same silicon substrate a plurality of MOS transistors each having a lamination of a gate insulation film and a gate electrode, said plurality of MOS transistors including a first MOS transistor and a second MOS transistor different from each other in thickness of the gate insulation film, said method comprising the steps of:
- forming the gate insulation film of said first MOS transistor to a thickness less than that of said second MOS transistor;
- forming the gate insulation film and the gate electrode of said second. MOS transistor;
- and
- forming thereafter the gate insulation film and the gate electrode of said first MOS transistor.
Dependencies are inferred from the claim text.