Y10S 438/953
Making radiation resistant device
Y10S438/953 (Making radiation resistant device) appears on 92 US grants and 11 published applications in this corpus.
Search patents in Y10S- Granted patents
- 92
- Published applications
- 11
- Assignees
- 50
- Inventors
- 136
- Latest grant
- 15 Jun 2010
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 3 | 0 |
| 1982 | 3 | 0 |
| 1983 | 0 | 0 |
| 1984 | 3 | 0 |
| 1985 | 1 | 0 |
| 1986 | 2 | 0 |
| 1987 | 5 | 0 |
| 1988 | 3 | 0 |
| 1989 | 2 | 0 |
| 1990 | 6 | 0 |
| 1991 | 6 | 0 |
| 1992 | 3 | 0 |
| 1993 | 4 | 0 |
| 1994 | 2 | 0 |
| 1995 | 3 | 0 |
| 1996 | 4 | 0 |
| 1997 | 6 | 0 |
| 1998 | 3 | 0 |
| 1999 | 5 | 0 |
| 2000 | 6 | 0 |
| 2001 | 3 | 2 |
| 2002 | 3 | 1 |
| 2003 | 2 | 0 |
| 2004 | 1 | 1 |
| 2005 | 1 | 4 |
| 2006 | 2 | 2 |
| 2007 | 3 | 1 |
| 2008 | 0 | 0 |
| 2009 | 1 | 0 |
| 2010 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Total ionizing dose suppression transistor architecture15 Jun 2010US 7,737,535 B2Aeroflex Colorado Springs Inc.
- Total ionizing dose suppression transistor architecture14 Apr 2009US 7,518,218 B2Aeroflex Colorado Springs Inc.
- Radiation hardened bipolar junction transistor6 Mar 2007US 7,187,056 B2Intersil Americas Inc.
- Dissipative isolation frames for active microelectronic devices, and methods of making such dissipative isolation frames30 Jan 2007US 7,170,147 B2Lucent Technologies Inc.
- Magnetically shielded circuit board2 Jan 2007US 7,157,290 B2The United States of America as represented by the Secretary of the Navy
- Total ionizing dose suppression transistor architecture9 Aug 2007US 2007/0181978 A1Aeroflex Colorado Springs Inc.
- Total ionizing dose suppression transistor architecture7 Sep 2006US 2006/0197108 A1Aeroflex Colorado Springs Inc.
- Radiation hardened bipolar junction transistor20 Jul 2006US 2006/0157736 A1Intersil Americas Inc.
- Radiation hardened bipolar junction transistor29 Dec 2005US 2005/0287754 A1Intersil Americas Inc.
- Magnetically shielded circuit board24 Mar 2005US 2005/0064607 A1The Government of the United States
Most cited
By later US patents
- Thin oxide sidewall insulators for silicon-over-insulator transistors277US 4,956,307 ATexas Instruments Incorporated · 1990
- Method of making silicon material with enhanced surface mobility by hydrogen ion implantation124US 5,198,371 ABiota Corp. · 1993
- Volatile memory cell with interface charge traps121US 5,608,250 ASGS-Thomson Microelectronics S.A. · 1997
- Method of making silicon-on-sapphire semiconductor devices71US 4,775,641 AGeneral Electric Company · 1988
- Method of making volatile memory cell with interface charge traps61US 5,633,178 ASGS-Thomson Microelectronics S.A. · 1997