Dissipative isolation frames for active microelectronic devices, and methods of making such dissipative isolation frames

A method of making a microelectronic apparatus having protection against high frequency electromagnetic radiation, comprising the steps of:

• providing a planar insulating substrate;
• forming an active semiconductor electronic device located over a first region of said insulating substrate;
• forming a doped semiconductor absorber located in a second region of said insulating substrate substantially surrounding said first region;
• forming a second active semiconductor electronic device located over a third region of said insulating substrate, said third region being substantially separated from said first region by said second region;
• and
• forming a dissipative conductor overlaying and adjacent to said doped semiconductor absorber;
• wherein said semiconductor absorber and dissipative conductor are configured to dissipate electromagnetic radiation having a center frequency within a range of between about 1 gigahertz and about 1,000 gigahertz.