Method of making silicon-on-sapphire semiconductor devices
AssigneeGeneral Electric Company
InventorsMichael T. Duffy, Glenn W. Cullen
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Abstract
A radiation hardened silicon-on-insulator semiconductor device and method of making the same is disclosed. A region is formed in the silicon layer adjacent the insulating substrate which has a high density of naturally occurring crystallographic defects. This region substantially reduces the back-channel leakage that occurs when the device is operated after being irradiated.
Claims14
In a method of making a silicon-on-insulator semiconductor device including a layer of silicon on an insulating substrate, a gate electrode and source and drain regions, the improvement comprising:
- forming a first region in said layer of silicon adjacent said insulating substrate which has a high density of naturally occurring crystallographic defects;
- and
- forming a second region in said layer of silicon which is substantially free of crystallographic defects.
A method of making a silicon-on-insulator semiconductor device comprising the steps of
- forming a layer of monocrystalline silicon on an insulating substrate, said monocrystalline silicon layer having at least a region adjacent said substrate which has a high density of naturally occurring crystallographic defects;
- forming an amorphous region in said silicon layer above said high density region of naturally occurring crystallographic defects;
- annealing said silicon layer to recrystallize said amorphous region to form a monocrystalline region which is substantially free of crystallographic defects.
Dependencies are inferred from the claim text.