Back to results
US 5,198,371 AGranted
Method of making silicon material with enhanced surface mobility by hydrogen ion implantation
AssigneeBiota Corp.
InventorJianming Li
Life of this patent
Estimating the term…
Abstract
A new-type silicon material is produced by hydrogen ion implantation and subsequent annealing, the annealing being preferably in two steps. The present invention raises surface mobility of a silicon wafer and produces a buried high-resistivity layer beneath a silicon surface layer. The resulting products are particularly useful for the improvement of yield and speed and radiation hardness of very large scale integrated circuits.
Claims6
A method of forming a buried high-resistivity layer comprising hydrogen bubbles in a region beneath a surface layer of a silicon wafer having a (100) crystal orientation comprising the steps of:
- implanting a dose of hydrogen ions into said silicon wafer;
- and
- heating said silicon wafer implanted with hydrogen ions, at a first temperature to form said buried high-resistivity layer comprising hydrogen bubbles.
Dependencies are inferred from the claim text.