Y10S 438/927
Electromigration resistant metallization
Y10S438/927 (Electromigration resistant metallization) appears on 126 US grants and 40 published applications in this corpus.
Search patents in Y10S- Granted patents
- 126
- Published applications
- 40
- Assignees
- 51
- Inventors
- 203
- Latest grant
- 25 Feb 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 2 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 3 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 5 | 0 |
| 1994 | 10 | 0 |
| 1995 | 9 | 0 |
| 1996 | 5 | 0 |
| 1997 | 10 | 0 |
| 1998 | 6 | 0 |
| 1999 | 10 | 0 |
| 2000 | 7 | 0 |
| 2001 | 6 | 1 |
| 2002 | 5 | 2 |
| 2003 | 4 | 3 |
| 2004 | 3 | 3 |
| 2005 | 1 | 6 |
| 2006 | 2 | 3 |
| 2007 | 6 | 3 |
| 2008 | 4 | 6 |
| 2009 | 4 | 3 |
| 2010 | 4 | 1 |
| 2011 | 3 | 0 |
| 2012 | 1 | 1 |
| 2013 | 1 | 1 |
| 2014 | 0 | 1 |
| 2015 | 1 | 2 |
| 2016 | 2 | 1 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 0 | 0 |
| 2021 | 0 | 1 |
| 2022 | 0 | 0 |
| 2023 | 0 | 0 |
| 2024 | 0 | 1 |
| 2025 | 1 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Methods of exposing conductive Vias of semiconductor devices and related semiconductor devices25 Feb 2025US 12,237,217 B2Micron Technology, Inc.
- Method and structure for determining thermal cycle reliability13 Sep 2016US 9,443,776 B2Globalfoundries Inc.
- Method and structure for determining thermal cycle reliability15 Mar 2016US 9,287,186 B2Globalfoundries Inc.
- Methods of exposing conductive vias of semiconductor devices and associated structures19 May 2015US 9,034,752 B2Micron Technology, Inc.
- Self-forming, self-aligned barriers for back-end interconnects and methods of making same11 Jun 2013US 8,461,683 B2Intel Corporation
- Methods of exposing conductive vias of semiconductor devices12 Jun 2025US 2025/0191972 A1Micron Technology, Inc.
- Self-forming, self-aligned barriers for back-end interconnects and methods of making same20 Jun 2024US 2024/0203786 A1Tahoe Research, Ltd.
- Methods of exposing conductive vias of semiconductor devices and related semiconductor devices17 Jun 2021US 2021/0183697 A1Micron Technology, Inc.
- Self-forming, self-aligned barriers for back-end interconnects and methods of making same20 Oct 2016US 2016/0307796 A1Intel Corporation
- Method and structure for determining thermal cycle reliability17 Sep 2015US 2015/0262899 A1International Business Machines Corporation
Most cited
By later US patents
- Method of doping metal layers for electromigration resistance541US 5,681,779 ALSI Logic Corporation · 1997
- Method of filling contacts in semiconductor devices151US 5,371,042 AAPPLIED Materials.Inc. · 1994
- Semiconductor device having an improved metal interconnect structure82US 5,442,235 AMotorola, Inc. · 1995
- Method for fabricating thermally stable contacts with a diffusion barrier formed at high temperatures79US 5,913,145 ATexas Instruments Incorporated · 1999
- Method for the formation of tin barrier layer with preferential (111) crystallographic orientation72US 5,242,860 AAPPLIED Materials.Inc. · 1993