Method of filling contacts in semiconductor devices
AssigneeApplied Materials, Inc.
InventorEdith Ong
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Abstract
An improved method of filling vias and openings in semiconductor devices comprises first faceting the top of the openings, depositing in sequence a barrier layer, as of TiN, treating the barrier layer to reduce its porosity, depositing a titanium-containing wetting layer, sputter depositing a first layer of aluminum at low temperatures and sputter depositing a second layer of aluminum at high temperatures to fill the opening and planarize the layer. The improved method is carried out preferably in a multichamber sputtering system.
Claims17
A method of filling vias and openings in semiconductor devices comprising
- a) faceting the upper corners of the openings;
- b) sputter depositing and stuffing a barrier layer at the bottom of the opening;
- c) depositing a thin layer of a wetting layer selected from the group consisting of titanium and compounds of titanium;
- d) depositing a first layer of an aluminum-containing metal at low temperature and
- c) depositing an aluminum-containing metal at elevated temperatures to fill the openings.
A method of filling vias and openings in semiconductor wafer substrates comprising the steps in sequence:
- a) transferring a wafer to a multichamber high vacuum system including one or more sputtering chambers;
- b) faceting the corners at the top of the opening;
- c) sputter depositing and stuffing a barrier layer at the bottom of the opening;
- d) depositing a thin layer of a wetting layer selected from the group consisting of titanium and compounds of titanium;
- e) depositing a first layer of an aluminum-containing metal at low temperature;
- and
- f) depositing a second layer of an aluminum-containing metal at elevated temperatures to fill the openings, the steps d), e) and f) carried out without leaving a vacuum environment.
A method of filling openings for contacts in semiconductor wafer substrates comprising:
- a) transferring a wafer to a multichamber high vacuum system including one or more sputtering chambers;
- b) sputter depositing and stuffing a barrier layer at the bottom of the opening;
- c) depositing a thin layer of a wetting layer selected from the group consisting of titanium and compounds of titanium;
- d) depositing a first layer of an aluminum-containing metal at low temperature, and
- e) depositing a second layer of an aluminum-containing metal at elevated temperatures to fill the openings so that during steps c), d) and e) the wafer does not leave a vacuum environment.
A method of filling vias in semiconductor wafer substrates comprising:
- a) transferring a wafer to a multichamber high vacuum system including one or more sputtering chambers;
- b) faceting the corners at the top of the via;
- c) depositing a thin layer of a wetting layer selected from the group consisting of titanium and compounds of titanium;
- d) depositing a first layer of an aluminum-containing metal at low temperature;
- and
- e) depositing a second layer of an aluminum-containing metal at elevated temperatures to fill the vias, the steps carried out without leaving a vacuum environment.
A method of filling vias and openings in a semiconductor wafer substrate comprising in sequence:
- a) transferring a wafer to a multichamber high vacuum system including one or more sputtering chambers;
- b) depositing a thin layer of a wetting layer selected from the group consisting of titanium and compounds of titanium;
- c) depositing a first layer of an aluminum-containing metal at low temperature;
- and
- d) depositing a second layer of an aluminum-containing metal at elevated temperatures to fill the openings, the steps carried out without leaving a vacuum environment.
Dependencies are inferred from the claim text.