Methods of exposing conductive vias of semiconductor devices and associated structures

A method of exposing conductive vias of a semiconductor device, comprising:

• removing a portion of a substrate at a backside surface opposing an active surface of the substrate to expose portions of conductive vias;
• conformally forming a barrier material comprising silicon nitride, silicon oxide, silicon carbide, or any combination of these over the conductive vias to a thickness less than a protruding height of a shortest conductive via;
• forming a self-planarizing isolation material over the barrier material, wherein an exposed surface of the self-planarizing isolation material is substantially planar;
• removing a portion of the self-planarizing isolation material, a portion of the barrier material, and a portion of protruding material of the conductive vias to expose the conductive vias;
• and
• stopping removal of the self-planarizing isolation material, the barrier material, and the conductive vias after exposing at least one laterally extending portion of the barrier material abutting the backside surface of the substrate.

A method of exposing conductive vias of a semiconductor device, comprising:

• conformally forming a barrier material comprising silicon nitride, silicon oxide, silicon carbide, or any combination of these over conductive vias extending from a backside surface of a substrate;
• forming a conformal isolation material over the barrier material;
• forming a self-planarizing isolation material over the conformal isolation material, wherein an exposed surface of the self-planarizing isolation material is substantially planar;
• removing a portion of the self-planarizing isolation material, a portion of the conformal isolation material, a portion of the barrier material, and a portion of protruding material of the conductive vias to expose the conductive vias;
• and
• stopping removal of the self-planarizing isolation material, the barrier material, and the conductive vias after exposing at least one laterally extending portion of the conformal isolation material.

A semiconductor device, comprising:

• conductive vias in a substrate and comprising exposed surfaces at a backside surface of the substrate;
• a barrier material comprising silicon nitride, silicon oxide, silicon carbide, or any combination of these surrounding the conductive vias;
• and
• a self-planarizing isolation material over at least a portion of the barrier material and located between the conductive vias,
• wherein at least one laterally extending portion of the barrier material is exposed adjacent an associated conductive via.

An electronic system, comprising:

• a first semiconductor device, comprising:
• conductive vias in a substrate and comprising exposed surfaces at a backside surface of the substrate;
• a barrier material comprising silicon nitride, silicon oxide, or both surrounding the conductive vias;
• and
• a self-planarizing isolation material over at least a portion of the barrier material and located between the conductive vias,
• wherein at least one laterally extending portion of the barrier material is exposed adjacent an associated conductive via;
• and
• a second semiconductor device operatively connected to the first semiconductor device.