Method and structure for determining thermal cycle reliability

A test structure used to determine reliability performance, comprising:

• a patterned metallization structure having a plurality of interfaces, which form stress risers, the metallization structure including at least one of:
• a via chain formed through layers of patterned metallization in the semiconductor structure such that a plurality of widths of vias are used to adjust strain in different layers;
• and
• a dummy structure formed to provide a via density in an area of the semiconductor structure to adjust strain in adjacent structures of the test structure;
• and
• a dielectric material surrounding the metallization structure, where a mismatch in coefficients of thermal expansion (CTE) between the metallization structure and the surrounding dielectric material exists such that failures occur under given stress conditions to provide a yield indicative of reliability for a manufacturing design.