Self-forming, self-aligned barriers for back-end interconnects and methods of making same

An apparatus, comprising:

• a semi-conductive substrate;
• an interlayer dielectric layer (ILD) disposed on the semi-conductive substrate;
• a metallization wire disposed in the ILD, wherein the metallization wire includes a bottom, a top opposite the bottom, and two sides, and wherein the metallization wire is contacted with an integral dielectric barrier composed of silicide at the top of the metallization wire, the silicide being in contact with the metallization wire;
• a dielectric film that is substantially the same chemistry as the ILD disposed on the ILD, the dielectric film being in contact with the ILD and the silicide, the dielectric film being disposed directly over the metallization wire;
• and
• a metallic barrier liner that contacts the metallization wire at the bottom of the metallization wire and the sides of the metallization wire, and wherein the metallic barrier liner is a different metal than the metallization wire.