Y10S 438/911
Differential oxidation and etching
Y10S438/911 (Differential oxidation and etching) appears on 174 US grants and 27 published applications in this corpus.
Search patents in Y10S- Granted patents
- 174
- Published applications
- 27
- Assignees
- 78
- Inventors
- 335
- Latest grant
- 7 May 2013
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 3 | 0 |
| 1979 | 3 | 0 |
| 1980 | 2 | 0 |
| 1981 | 7 | 0 |
| 1982 | 6 | 0 |
| 1983 | 1 | 0 |
| 1984 | 5 | 0 |
| 1985 | 7 | 0 |
| 1986 | 1 | 0 |
| 1987 | 7 | 0 |
| 1988 | 4 | 0 |
| 1989 | 5 | 0 |
| 1990 | 7 | 0 |
| 1991 | 10 | 0 |
| 1992 | 4 | 0 |
| 1993 | 9 | 0 |
| 1994 | 9 | 0 |
| 1995 | 8 | 0 |
| 1996 | 7 | 0 |
| 1997 | 13 | 0 |
| 1998 | 7 | 0 |
| 1999 | 6 | 0 |
| 2000 | 7 | 0 |
| 2001 | 3 | 0 |
| 2002 | 4 | 5 |
| 2003 | 4 | 0 |
| 2004 | 4 | 4 |
| 2005 | 3 | 2 |
| 2006 | 1 | 1 |
| 2007 | 5 | 9 |
| 2008 | 1 | 2 |
| 2009 | 0 | 0 |
| 2010 | 4 | 3 |
| 2011 | 3 | 1 |
| 2012 | 1 | 0 |
| 2013 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Methods of uniformly removing silicon oxide and an intermediate semiconductor device7 May 2013US 8,435,904 B2Micron Technology, Inc.
- Enhancing NAND flash floating gate performance24 Apr 2012US 8,163,626 B2APPLIED Materials.Inc.
- Method of selective nitridation5 Jul 2011US 7,972,933 B2APPLIED Materials.Inc.
- Device comprising a field of tips used in biotechnology applications29 Mar 2011US 7,915,176 B2STMicroelectronics (Crolles 2) SAS
- Method for separately optimizing spacer width for two or more transistor classes using a recess spacer integration8 Mar 2011US 7,902,021 B2Freescale Semiconductor, Inc.
- Device comprising a field of tips used in biotechnology applications12 May 2011US 2011/0111448 A1STMicroelectronics (Crolles 2) SAS
- Enhancing nand flash floating gate performance16 Dec 2010US 2010/0317186 A1APPLIED Materials.Inc.
- Methods of uniformly removing silicon oxide and an intermediate semiconductor device25 Nov 2010US 2010/0295148 A1Micron Technology, Inc.
- Method of selective nitridation30 Sep 2010US 2010/0248435 A1APPLIED Materials.Inc.
- Methods of uniformly removing silicon oxide, a method of removing a sacrifical oxide, and an intermediate semiconductor device structure17 Jul 2008US 2008/0171438 A1Micron Technology, Inc.
Most cited
By later US patents
- Method to form a capacitor having multiple pillars for advanced DRAMS399US 5,650,351 AVanguard International Semiconductor Corporation · 1997
- Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD320US 6,335,288 B12002
- Thin oxide sidewall insulators for silicon-over-insulator transistors277US 4,956,307 ATexas Instruments Incorporated · 1990
- Method of manufacturing semiconductor device having polycrystalline silicon layer with metal silicide film199US 4,716,131 ANEC Corporation · 1987
- Process for patterning local interconnects183US 4,657,628 ATexas Instruments Incorporated · 1987