Y10S 438/901
Capacitive junction
Y10S438/901 (Capacitive junction) appears on 46 US grants and 10 published applications in this corpus.
Search patents in Y10S- Granted patents
- 46
- Published applications
- 10
- Assignees
- 21
- Inventors
- 56
- Latest grant
- 11 Sep 2012
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 3 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 4 | 0 |
| 1992 | 2 | 0 |
| 1993 | 3 | 0 |
| 1994 | 3 | 0 |
| 1995 | 0 | 0 |
| 1996 | 4 | 0 |
| 1997 | 0 | 0 |
| 1998 | 3 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 1 | 1 |
| 2002 | 0 | 2 |
| 2003 | 0 | 0 |
| 2004 | 0 | 1 |
| 2005 | 2 | 1 |
| 2006 | 3 | 2 |
| 2007 | 3 | 0 |
| 2008 | 0 | 1 |
| 2009 | 1 | 1 |
| 2010 | 1 | 1 |
| 2011 | 0 | 0 |
| 2012 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Protection of integrated circuit gates during metallization processes11 Sep 2012US 8,264,043 B1Cypress Semiconductor Corporation
- Semiconductor device and method of manufacturing the same24 Aug 2010US 7,781,284 B2Fujitsu Semiconductor Limited
- Semiconductor device and method of manufacturing the same13 Jan 2009US 7,476,921 B2Fujitsu Limited
- Nanocrystal protective layer for crossbar molecular electronic devices18 Dec 2007US 7,309,875 B2Hewlett-Packard Development Company, L. P.
- Semiconductor device and method of manufacturing the same23 Oct 2007US 7,285,460 B2Fujitsu Limited
- Semiconductor device and method of manufacturing the same10 Jun 2010US 2010/0140743 A1Fujitsu Limited
- Semiconductor device and method of manufacturing the same21 May 2009US 2009/0127657 A1Fujitsu Limited
- Semiconductor device and method of manufacturing the same6 Mar 2008US 2008/0054402 A1Fujitsu Limited
- Nanocrystal protective layer for crossbar molecular electronic devices25 May 2006US 2006/0108577 A1Hewlett-Packard Development Company, L. P.
- Semiconductor device and method of manufacturing the same5 Jan 2006US 2006/0001026 A1Fujitsu Limited
Most cited
By later US patents
- Method of making a high density V-MOS memory array117US 4,326,332 AInternational Business Machines Corporation · 1982
- Process for the production of a single transistor memory cell93US 4,194,283 ASiemens Aktiengesellschaft · 1980
- PN junction floating gate EEPROM, flash EPROM device and method of manufacture thereof85US 5,554,552 ATaiwan Semiconductor Manufacturing Company.Ltd · 1996
- Method for producing a single transistor storage cell74US 4,227,297 ASiemens Aktiengesellschaft · 1980
- Method of making a V-MOS field effect transistor for a dynamic memory cell having improved capacitance55US 4,116,720 ABurroughs Corporation · 1978