Semiconductor device and method of manufacturing the same
AssigneeFujitsu Limited
InventorNaoya Sashida
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Abstract
There is provided a semiconductor device which comprises a first interlayer insulating film (first insulating film) formed over a silicon (semiconductor) substrate, a capacitor formed on the first interlayer insulating film and having a lower electrode, a dielectric film, and an upper electrode, a fourth interlayer insulating film (second insulating film) formed over the capacitor and the first interlayer insulating film, and a metal pattern formed on the fourth interlayer insulating film over the capacitor and its periphery to have a stress in an opposite direction to the fourth interlayer insulating film. As a result, characteristics of the capacitor covered with the interlayer insulating film can be improved.
Claims7
A semiconductor device comprising:
- a first insulating film formed over a semiconductor substrate;
- a capacitor formed on the first insulating film and having a lower electrode, a dielectric film, and an upper electrode;
- a second insulating film formed over the capacitor and the first insulating film;
- a recess formed in the second insulating film over the capacitor and a periphery thereof;
- and
- a metal pattern formed in the recess and having a stress in an opposite direction to a stress of the second insulating film.
Dependencies are inferred from the claim text.