H10P 90/1902
Preparing horizontally inhomogeneous wafers
Official title: {Preparing horizontally inhomogeneous wafers}
H10P90/1902 (Preparing horizontally inhomogeneous wafers) appears on 61 US grants and 75 published applications in this corpus.
Search patents in H10P- Granted patents
- 61
- Published applications
- 75
- Assignees
- 42
- Inventors
- 128
- Latest grant
- 26 Dec 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 2 |
| 2002 | 1 | 0 |
| 2003 | 0 | 2 |
| 2004 | 1 | 1 |
| 2005 | 1 | 3 |
| 2006 | 2 | 0 |
| 2007 | 3 | 1 |
| 2008 | 1 | 1 |
| 2009 | 1 | 5 |
| 2010 | 3 | 5 |
| 2011 | 3 | 12 |
| 2012 | 1 | 6 |
| 2013 | 6 | 7 |
| 2014 | 9 | 7 |
| 2015 | 9 | 11 |
| 2016 | 8 | 6 |
| 2017 | 4 | 2 |
| 2018 | 3 | 1 |
| 2019 | 1 | 0 |
| 2020 | 1 | 0 |
| 2021 | 0 | 0 |
| 2022 | 0 | 1 |
| 2023 | 1 | 1 |
| 2024 | 0 | 0 |
| 2025 | 0 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Method for producing SiGe-based zones at different concentrations of Ge26 Dec 2023US 11,854,805 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Semiconductor device and method for manufacturing same11 Aug 2020US 10,741,683 B2Sumitomo Electric Industries, Ltd.
- Monolithic integration of group III nitride epitaxial layers17 Sep 2019US 10,418,473 B1HRL Laboratories, LLC
- Method for treating a gallium nitride layer comprising dislocations5 Jun 2018US 9,991,341 B2STMicroelectronics (Tours) SAS
- Monolithic integration of group III nitride epitaxial layers24 Apr 2018US 9,954,090 B1HRL Laboratories, LLC
- Power Semiconductor Devices with Stacked Layers7 Aug 2025US 2025/0254943 A1Wolfspeed, Inc.
- Semiconductor fabrication process23 Nov 2023US 2023/0378002 A1X-FAB France SAS
- Method for producing sige-based zones at different concentrations of ge28 Jul 2022US 2022/0238338 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Semiconductor device and method for manufacturing same19 Jul 2018US 2018/0204942 A1Sumitomo Electric Industries, Ltd.
- Method of Fabricating III-Nitride Semiconductor Dies16 Mar 2017US 2017/0076937 A1Infineon Technologies Americas Corp.
Most cited
By later US patents
- Method and apparatus for fabricating self-assembling microstructures172US 6,864,570 B2The Regents of the University of California · 2005
- Apparatus and method for forming a silicon film across the surface of a glass substrate83US 6,818,529 B2APPLIED Materials.Inc. · 2004
- Method and apparatus for fabricating self-assembling microstructures63US 7,727,804 B2The Regents of the University of California · 2010
- Hybrid orientation substrates by in-place bonding and amorphization/templated recrystallization36US 7,060,585 B1International Business Machines Corporation · 2006
- Silicon carbide wafer bonded to a silicon wafer28US 5,441,911 ATexas Instruments Incorporated · 1995