Hybrid orientation substrates by in-place bonding and amorphization/templated recrystallization

A method of forming a planar hybrid-orientation substrate comprising:

• selecting a starting substrate comprising a first single crystal semiconductor layer having a first crystal orientation overlying a second single crystal semiconductor layer having a second crystal orientation different from the first, first and second semiconductor layers separated by a sacrificial spacer layer;
• replacing first single crystal semiconductor layer in selected regions with a deposited amorphous semiconductor material, thereby creating regions of deposited amorphous semiconductor material on said spacer layer;
• performing in-place bonding to bring remaining regions of first semiconductor layer and regions of deposited amorphous semiconductor material into direct contact with the second semiconductor layer at a bonded interface;
• and
• converting the deposited amorphous semiconductor material on the upper side of the bonded interface to a single crystal semiconductor material having the second crystal orientation, using a templated crystallization process wherein the underlying crystalline semiconductor layer having the second crystal orientation acts as the template.