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US 9,991,341 B2Granted
Method for treating a gallium nitride layer comprising dislocations
AssigneeSTMicroelectronics (Tours) SAS
InventorArnaud Yvon
Life of this patent
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Abstract
A method is for treating a doped gallium nitride substrate of a first conductivity type, having dislocations emerging on the side of at least one of its surfaces. The method may include: a) forming, where each dislocation emerges, a recess extending into the substrate from the at least one surface; and b) filling the recesses with doped gallium nitride of the second conductivity type.
Claims30
A semiconductor device comprising:
- a substrate;
- a doped gallium nitride layer on said substrate and having a plurality of dislocations emerging at a first side of the doped gallium nitride layer;
- a recess extending into through a first surface of the first side of the doped gallium nitride layer at each dislocation;
- and
- a doped single-crystal gallium nitride body in each recess, the first surface of the doped gallium nitride layer being coplanar with a second surface of the doped single-crystal gallium nitride bodies, each dislocation ending at a location spaced away from the first and second surfaces.
2 more elements
A Schottky diode comprising:
- a doped gallium nitride layer having a dislocation emerging at a first surface of a first side of the doped gallium nitride layer;
- a recess extending into the first side of the doped gallium nitride layer at the dislocation;
- a doped single-crystal gallium nitride body in the recess, the doped single-crystal gallium nitride body interrupting the dislocation, a second surface of the first side of the doped gallium nitride layer being coplanar with a third surface of the doped single-crystal gallium nitride body;
- and
- a metal layer on the doped gallium nitride layer and doped single-crystal gallium nitride body.
2 more elements
A semiconductor device comprising:
- a doped gallium nitride layer having a plurality of dislocations below a first surface, the doped gallium nitride layer having a first conductivity type;
- a recess extending through the first surface of the doped gallium nitride layer at ones of the plurality of dislocations, the ones of the plurality of dislocations ending at the recess;
- a doped single-crystal gallium nitride body filling each recess, the doped single-crystal gallium nitride body having a second conductivity type, a second surface of the doped single-crystal gallium nitride bodies coplanar with the first surface of the doped gallium nitride layer;
- and
- at least one additional layer on the doped gallium nitride layer and doped single-crystal gallium nitride bodies.
2 more elements
Dependencies are inferred from the claim text.