Back to results
US 9,954,090 B1Granted
Monolithic integration of group III nitride epitaxial layers
AssigneeHRL Laboratories, LLC
InventorsDavid F. Brown, Keisuke Shinohara, Miroslav Micovic, Andrea Corrion
Life of this patent
Estimating the term…
Abstract
A monolithically integrated device includes a substrate, a first set of Group III nitride epitaxial layers grown for a first HFET on a first region of the substrate, and a second set of Group III nitride epitaxial layers for a second HFET grown on a second region of the substrate.
Claims6
A monolithically integrated device comprising:
- a substrate;
- a first set of Group III nitride epitaxial layers grown on a first region of the substrate for a first heterostructure field effect transistor;
- and
- a second set of Group III nitride epitaxial layers grown on a second region of the substrate for a second heterostructure field effect transistor;
- wherein the first heterostructure field effect transistor is an enhancement mode device;
- wherein the second heterostructure field effect transistor is a depletion mode device;
- wherein the first set of Group III nitride epitaxial layers comprises a first AlN barrier layer having a first thickness;
- and
- wherein the second set of Group III nitride epitaxial layers comprises a second AlN barrier layer having a second thickness greater than the first thickness.
6 more elements
Dependencies are inferred from the claim text.