Method of Fabricating III-Nitride Semiconductor Dies
AssigneeInfineon Technologies Americas Corp.
InventorMichael A. Briere
Life of this patent
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Abstract
According to an embodiment of a method of fabricating III-Nitride semiconductor dies, the method includes: growing a III-Nitride body over a group IV substrate in a semiconductor wafer; forming at least one device layer over the III-Nitride body; etching grid array trenches in the III-Nitride body and in the group IV substrate; forming an edge trench around a perimeter of the semiconductor wafer, the grid array trenches terminating inside the group IV substrate; and forming separate dies by cutting the semiconductor wafer approximately along the grid array trenches.
Claims17
1-20. (canceled)
A method, comprising:
- growing a III-Nitride body over a group IV substrate in a semiconductor water;
- forming at least one device layer over the III-Nitride body;
- etching grid array trenches in the III-Nitride body and in the group IV substrate;
- forming an edge trench around a perimeter of the semiconductor wafer, the grid array trenches terminating inside the group IV substrate;
- and
- forming separate dies by cutting the semiconductor wafer approximately along the grid array trenches.
A method, comprising:
- growing a group III-V body over a group IV substrate in a semiconductor wafer;
- forming at least one device layer over the group III-V body;
- etching first trenches in the group III-V body;
- forming an edge trench around a perimeter of the semiconductor wafer, the edge trench terminating inside the group IV substrate;
- and
- forming separate dies by cutting the semiconductor wafer approximately along the first trenches.
Dependencies are inferred from the claim text.