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  1. Technology classes
  2. /H · Electricity
  3. /H10 · Semiconductor devices
  4. /H10P · Generic processes or apparatus for the manufacture or treatment of devices covered
  5. /H10P 14/00 · Formation of materials
  6. /H10P 14/60 · Formation of materials: of insulating materials
  7. /H10P 14/69 · Inorganic materials
  8. /H10P 14/694 · Composed of nitrides
  9. /H10P 14/6947 · The material containing at least one metal element and not containing oxygen
  10. /H10P 14/69471
H10P 14/69471

Characterised by the metal

Official title: {characterised by the metal}

H10P14/69471 (Characterised by the metal) appears on 0 US grants and 5 published applications in this corpus.

Search patents in H10P

Where it sits

  1. HElectricity
  2. H10Semiconductor devices
  3. H10PGeneric processes or apparatus for the manufacture or treatment of devices covered
  4. H10P 14/00Formation of materials
  5. H10P 14/60Formation of materials: of insulating materials
  6. H10P 14/69Inorganic materials
  7. H10P 14/694Composed of nitrides
  8. H10P 14/6947The material containing at least one metal element and not containing oxygen
  9. H10P 14/69471Characterised by the metal
  10. 7subgroups, listed below
Granted patents
0
Published applications
5
Assignees
4
Inventors
16

Filings by year

Granted patentsPublished applications
H10P 14/69471: granted patents and published applications per publication year
YearGranted patentsPublished applications
202605

2026

By publication year. 2026 runs to 8 Oct.

Subgroups

Granted patents
  • H10P 14/69472The material containing aluminium0
  • H10P 14/69473The material containing hafnium0
  • H10P 14/69474The material containing tantalum0
  • H10P 14/69475The material containing titanium0
  • H10P 14/69476The material containing zirconium0
  • H10P 14/69477The material containing at least one rare earth metal element0
  • H10P 14/69478The material containing two or more metal elements0

Recent patents

No granted patents in this class yet.

  • Method of Providing a Multi-layer Adhesion Layer on a Workpiece17 Sep 2026US 2026/0282772 A1
  • Film forming method and film forming apparatus3 Sep 2026US 2026/0258548 A1Tokyo Electron Limited
  • Localized film stress modulation by implant20 Aug 2026US 2026/0247885 A1APPLIED Materials.Inc.
  • Deposition of ain on a silicon substrate and gan semiconductor transition layer structure6 Aug 2026US 2026/0231701 A1Epinovatech AB
  • Methods for depositing a layer including group iii and group v elements on a silicon substrate30 Jul 2026US 2026/0223608 A1Aixtron SE

Most cited

By later US patents

No patent in this class has been cited by a later US patent yet.

Top assignees

Documents
  • Aixtron SE1
  • APPLIED Materials.Inc.1
  • EEpinovatech AB1
  • Tokyo Electron Limited1

Often classified with

  • C23CCoating metallic material5
  • C30BSingle-crystal growth2
  • H03HImpedance networks1
  • H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by1

Documents that also carry the other class.

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