H10P 14/3464
Nanotubes
Official title: {Nanotubes}
H10P14/3464 (Nanotubes) appears on 136 US grants and 158 published applications in this corpus.
Search patents in H10P- Granted patents
- 136
- Published applications
- 158
- Assignees
- 70
- Inventors
- 300
- Latest grant
- 30 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 0 | 1 |
| 2003 | 0 | 0 |
| 2004 | 0 | 1 |
| 2005 | 0 | 2 |
| 2006 | 0 | 5 |
| 2007 | 3 | 6 |
| 2008 | 2 | 4 |
| 2009 | 3 | 12 |
| 2010 | 7 | 11 |
| 2011 | 8 | 7 |
| 2012 | 4 | 7 |
| 2013 | 8 | 5 |
| 2014 | 8 | 14 |
| 2015 | 13 | 16 |
| 2016 | 15 | 11 |
| 2017 | 10 | 11 |
| 2018 | 9 | 11 |
| 2019 | 12 | 5 |
| 2020 | 7 | 7 |
| 2021 | 9 | 5 |
| 2022 | 6 | 5 |
| 2023 | 6 | 5 |
| 2024 | 4 | 5 |
| 2025 | 0 | 1 |
| 2026 | 2 | 1 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Double-gate carbon nanotube transistor30 Jun 2026US 12,672,480 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Transistors with channels formed of low-dimensional materials and method forming same23 Jun 2026US 12,666,858 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Two-dimensional semiconductor based printable optoelectronic inks, fabricating methods and applications of same31 Dec 2024US 12,183,574 B2Northwestern University
- Method of manufacturing semiconductor devices including the steps of removing one or more of the nanotubes from the stack of nanotubes, and/or removing spacers that surrounds each of the plurality of nanotubes, and forming gate dielectric and/or gate electrode to the nanotubes26 Nov 2024US 12,151,213 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Terahertz capable integrated circuit13 Aug 2024US 12,062,712 B2Averoses, Inc.
- Double-gate carbon nanotube transistor1 Oct 2026US 2026/0305155 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Surface-water-assisted deposition of patterned films of aligned nanoparticles13 Feb 2025US 2025/0054755 A1
- Scalable Self-assembly Technique for Strain-Engineering of Amorphous Complex Oxides and Fabrication of Hybrid Superlattices19 Dec 2024US 2024/0420956 A1UNM Rainforest Innovations
- Method of Manufacturing Semiconductor Devices Including The Steps of Removing One or More of the Nanotubes from the Stack of Nanotubes, and/or Removing Spacers that Surrounds Each of the Plurality of Nanotubes, and Forming Gate Dielectric and/or Gate Electrode to the Nanotubes28 Nov 2024US 2024/0390861 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Transistors with channels formed of low-dimensional materials and method forming same14 Nov 2024US 2024/0379440 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices77US 7,211,464 B2President and Fellows of Harvard College · 2007
- Sacrificial template method of fabricating a nanotube25US 7,211,143 B2The Regents of the University of California · 2007
- Systems and methods for nanowire growth25US 7,776,760 B2Nanosys, Inc. · 2010
- Localized synthesis and self-assembly of nanostructures24US 7,311,776 B2The Regents of the University of California · 2007
- Systems and methods for harvesting and reducing contamination in nanowires23US 7,741,197 B1Nanosys, Inc. · 2010