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US 12,151,213 B2Granted
Method of manufacturing semiconductor devices including the steps of removing one or more of the nanotubes from the stack of nanotubes, and/or removing spacers that surrounds each of the plurality of nanotubes, and forming gate dielectric and/or gate electrode to the nanotubes
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTzu-Ang Chao, Gregory Michael Pitner, Tse-An Chen, Lain-Jong Li, Yu Chao Lin
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Abstract
A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- introducing nanotubes to a filter with a solution, the solution comprising a surfactant, wherein after the introducing the nanotubes the nanotubes are aligned with each other in a stack of nanotubes;
- removing one or more of the nanotubes from the stack of nanotubes;
- and
- after the removing the one or more of the nanotubes, removing the surfactant.
1 more element
A method of manufacturing a semiconductor device, the method comprising:
- using a filter to align a plurality of nanotubes, wherein after the using the filter a first nanotube of the plurality of nanotubes is located a first distance from a second nanotube of the plurality of nanotubes, the first distance being set by a coating material around each one of the nanotubes;
- separating one or more third nanotubes from the plurality of nanotubes;
- after the separating the one or more third nanotubes, removing the coating material;
- and
- depositing a gate dielectric around the plurality of nanotubes.
2 more elements
A method of manufacturing a semiconductor device, the method comprising:
- receiving a stack of nanostructures, wherein each nanostructure within the stack of nanostructures is surrounded by a spacer;
- modifying the number of nanostructures within the stack of nanostructures;
- and
- forming a gate electrode adjacent to the nanostructures after removing the spacer.
1 more element
Dependencies are inferred from the claim text.