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US 12,062,712 B2Granted
Terahertz capable integrated circuit
AssigneeAveroses, Inc.
InventorsSammy K. Brown, John D. Bryant, Thomas Brumett
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Abstract
A nano-vacuum tube (NVT) transistor comprising a source having a knife edge, a drain, and a channel formed between the source and the drain, the channel having a width to provide a pseudo-vacuum in a normal atmosphere. The NVT transistor utilizing a space charge plasma formed at the knife edge within the channel.
Claims19
A method of manufacturing a nano-vacuum tube (NVT), the method comprising:
- providing a substrate;
- forming, on the substrate, a source having a knife edge, wherein forming the source further comprises:
- adding a resist directly on the substrate;
- removing at least an upper level of the resist;
- and
- depositing a conductive material within the removed portion of the resist;
- forming, on the substrate, a drain;
- and
- producing a channel formed between the source and the drain, the channel having a width to provide a pseudo-vacuum in a normal atmosphere.
6 more elements
Dependencies are inferred from the claim text.