H10P 14/263
Using melted materials
Official title: {using melted materials}
H10P14/263 (Using melted materials) appears on 223 US grants and 132 published applications in this corpus.
Search patents in H10P- Granted patents
- 223
- Published applications
- 132
- Assignees
- 116
- Inventors
- 457
- Latest grant
- 10 Mar 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 20 | 0 |
| 1977 | 14 | 0 |
| 1978 | 10 | 0 |
| 1979 | 6 | 0 |
| 1980 | 6 | 0 |
| 1981 | 7 | 0 |
| 1982 | 4 | 0 |
| 1983 | 4 | 0 |
| 1984 | 3 | 0 |
| 1985 | 8 | 0 |
| 1986 | 7 | 0 |
| 1987 | 5 | 0 |
| 1988 | 2 | 0 |
| 1989 | 7 | 0 |
| 1990 | 4 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 4 | 0 |
| 1994 | 7 | 0 |
| 1995 | 2 | 0 |
| 1996 | 5 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 3 | 0 |
| 2000 | 1 | 0 |
| 2001 | 1 | 1 |
| 2002 | 2 | 2 |
| 2003 | 2 | 3 |
| 2004 | 2 | 4 |
| 2005 | 1 | 5 |
| 2006 | 0 | 0 |
| 2007 | 5 | 3 |
| 2008 | 0 | 5 |
| 2009 | 2 | 5 |
| 2010 | 1 | 13 |
| 2011 | 8 | 11 |
| 2012 | 6 | 7 |
| 2013 | 9 | 8 |
| 2014 | 4 | 15 |
| 2015 | 6 | 4 |
| 2016 | 4 | 4 |
| 2017 | 6 | 7 |
| 2018 | 2 | 12 |
| 2019 | 7 | 4 |
| 2020 | 9 | 3 |
| 2021 | 3 | 4 |
| 2022 | 3 | 2 |
| 2023 | 3 | 2 |
| 2024 | 0 | 4 |
| 2025 | 3 | 3 |
| 2026 | 1 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Gallium nitride crystal, gallium nitride substrate, and method for producing gallium nitride substrate10 Mar 2026US 12,571,123 B2Mitsubishi Chemical Corporation
- Group 13 element nitride crystal layer, self-supporting substrate, and functional element19 Aug 2025US 12,392,053 B2NGK Insulators, Ltd.
- Formation of single crystal semiconductors using planar vapor liquid solid epitaxy1 Apr 2025US 12,266,526 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Manufacturing method of RF components25 Mar 2025US 12,261,059 B2STMicroelectronics (Tours) SAS
- Method for producing a single crystal from semiconductor material by the FZ method; device for carrying out the method and semiconductor silicon wafer17 Oct 2023US 11,788,201 B2Siltronic AG
- Manufacturing method of group-iii nitride semiconductor14 May 2026US 2026/0132538 A1The University of Osaka
- Formation of single crystal semiconductors using planar vapor liquid solid epitaxy10 Jul 2025US 2025/0226217 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Manufacturing method of rf components12 Jun 2025US 2025/0191935 A1STMicroelectronics (Tours) SAS
- Gan crystal and gan wafer17 Apr 2025US 2025/0122642 A1Mitsubishi Chemical Corporation
- Method for producing beta-ga2o3/beta-ga2o3 multilayer body19 Dec 2024US 2024/0417881 A1Mitsubishi Gas Chemical Company, Inc.
Most cited
By later US patents
- Method of producing semiconductor member and method of producing solar cell99US 6,190,937 B1Canon Kabushiki Kaisha · 2001
- Method of producing semiconductor member and method of producing solar cell63US 6,756,289 B1Canon Kabushiki Kaisha · 2004
- Hetero-epitaxial growth of non-lattice matched semiconductors52US 5,356,509 AAstroPower, Inc. · 1994
- Epitaxial indium-gallium-arsenide phosphide layer on lattice-matched indium-phosphide substrate and devices45US 3,982,261 AVarian Associates, Inc. · 1976
- Method of fabrication of a monolithic integrated optical circuit39US 4,114,257 ATexas Instruments Incorporated · 1978