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AssigneesMitsubishi Chemical Corporation, The Japan Steel Works, Ltd., Tohoku University
InventorsYutaka Mikawa, Hirotaka Ikeda, Quanxi Bao, Kouhei Kurimoto, Kohei Shima, Kazunobu Kojima, Toru Ishiguro, Shigefusa Chichibu
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An object of the present invention is to provide a GaN crystal long in light emission lifetime by time-resolved photoluminescence measurement and provide high-quality GaN crystal and GaN substrate that have few specified crystal defects affecting the light emission lifetime. A gallium nitride crystal having a light emission lifetime by time-resolved photoluminescence measurement, of 5 ps or more and 200 ps or less, and satisfying at least one of the following requirement (i) and requirement (ii): (i) an FWHM in a 004 diffraction X-ray rocking curve is 50 arcsec or less at least one position of the crystal; and (ii) a dislocation density is 5×106 cm−2 or less.
A gallium nitride crystal having a light emission lifetime by time-resolved photoluminescence measurement, of 5 ps or more and 200 ps or less, and satisfying at least one of the following requirement (i) and requirement (ii):
A method for producing a gallium nitride substrate, the method comprising a step of growing a gallium nitride crystal having a thickness of 500 μm or more on a gallium nitride seed, by an ammonothermal method, and cutting out the gallium nitride crystal grown, to a plate shape, to produce a gallium nitride substrate,
Dependencies are inferred from the claim text.