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US 2025/0191935 A1Published application
Manufacturing method of rf components
AssigneeSTMicroelectronics (Tours) SAS
InventorPatrick HAUTTECOEUR
Life of this patent
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Abstract
The present description concerns a method of manufacturing a device comprising at least one radio frequency component on a semiconductor substrate comprising: a) a laser anneal of a first thickness of the substrate on the upper surface side of the substrate; b) the forming of an insulating layer on the upper surface of the substrate; and c) the forming of said at least one radio frequency component on the insulating layer.
Claims20
A device, comprising:
- a semiconductor substrate including:
- a first layer;
- a second layer on the first layer, the second layer includes a plurality of voids;
- and
- a third layer on the second layer, the third layer includes a plurality of charge carrier traps.
2 more elements
A device, comprising:
- a substrate including a surface and a first portion;
- a first defect layer of the substrate containing first defects of a first type, the first defect layer is spaced apart from the surface of the substrate, and the first defect layer is on the first portion of the substrate;
- a second defect layer of the substrate containing second defects of a second type different from the first type, the second defects being of a first complex type between carbon atoms and first atoms and of a second complex type between carbon atoms and oxygen atoms, the second defect layer is at the surface of the substrate, and the second defect layer is spaced apart from the first portion by the first defect layer;
- an insulating layer on the surface of the substrate and on the second defect layer of the substrate, the insulating layer being spaced apart from the first defect layer by the second defect layer;
- and
- one or more radio frequency components on the insulating layer.
3 more elements
A device, comprising:
- a substrate including a surface and a first portion that has a first oxygen concentration;
- a void defect layer of the substrate containing void defects, the void defect layer is spaced apart from the surface of the substrate, and the void defect layer is on the first portion of the substrate;
- a complex defect layer of the substrate containing complex defects, the complex defects being of a first complex type between carbon atoms and first atoms and of a second complex type between carbon atoms and oxygen atoms, the complex defect layer is at the surface of the substrate, and the complex defect layer is spaced apart from the first portion by the void defect layer;
- an insulating layer on the surface of the substrate and on the second defect layer of the substrate, the insulating layer being spaced apart from the first defect layer by the second defect layer;
- and
- one or more radio frequency components on the insulating layer.
3 more elements
Dependencies are inferred from the claim text.