Group 13 element nitride crystal layer, self-supporting substrate, and functional element
AssigneeNGK Insulators, Ltd.
InventorsSuguru Noguchi, Takayuki Hirao, Yoshinori Isoda, Tetsuya Uchikawa
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AssigneeNGK Insulators, Ltd.
InventorsSuguru Noguchi, Takayuki Hirao, Yoshinori Isoda, Tetsuya Uchikawa
Estimating the term…
A group 13 nitride crystal layer is composed of a group 13 nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or the mixed crystals thereof, and the group 13 nitride crystal layer includes an upper surface and bottom surface. The group 13 nitride crystal layer includes high-luminance layers and low-luminance layers being present alternately, and the low-luminance layers have thicknesses of 3 or larger and 10 or smaller provided that 1 is assigned to a thickness of the high-luminance layer, when a cross section of the group 13 nitride crystal layer cut in a direction perpendicular to the upper surface is observed by cathode luminescence.
A group 13 nitride crystal layer comprising a group 13 nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or the mixed crystals thereof, said group 13 nitride crystal layer comprising an upper surface and bottom surface,
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