GaN CRYSTAL AND GaN WAFER

A GaN crystal comprising a main surface with an angle between a normal line of the main surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein

• the GaN crystal has one or more band-shaped dislocation-concentrated regions on the main surface, and
• the GaN crystal satisfies at least one requirement selected from the group consisting of (1), (2), and (3) as follows:
• (1) each band-shaped dislocation-concentrated region has a maximum effective width of less than 50 82 m;
• (2) each band-shaped dislocation-concentrated region satisfies at least one of a requirement (A) or a requirement (B), where
• (A) a dislocation density in a region (Y) defined by two line segments drawn in parallel to a longitudinal direction of the band-shaped dislocation-concentrated region at positions of 15 μm from a center of the band-shaped dislocation-concentrated region in a lateral direction perpendicular to the longitudinal direction is less than 3×107 cm−2, and
• (B) a dislocation density in a region (Z) defined by two line segments drawn in parallel to a longitudinal direction of the band-shaped dislocation-concentrated region at positions of 50 82 m from a center of the band-shaped dislocation-concentrated region in a lateral direction perpendicular to the longitudinal direction is less than 2.5×107 cm−2;
• and
• (3) a ratio (DZ/DX) of the dislocation density DZ to the dislocation density DX defined below is 0.5 or less, and/or a ratio (DZ/DY) of the dislocation density DZ to the dislocation density DY defined below is 0.5 or less, where
• the dislocation density DX:
• a dislocation density in a region (X) defined by two line segments drawn in parallel to a longitudinal direction of the band-shaped dislocation-concentrated region at positions of 5 μm from a center of the band-shaped dislocation-concentrated region in a lateral direction perpendicular to the longitudinal direction;
• the dislocation density DY:
• a dislocation density in a region (Y) defined by two line segments drawn in parallel to a longitudinal direction of the band-shaped dislocation-concentrated region at positions of 15 μm from a center of the band-shaped dislocation-concentrated region in a lateral direction perpendicular to the longitudinal direction;
• and
• the dislocation density DZ:
• a dislocation density in a region (Z) defined by two line segments drawn in parallel to a longitudinal direction of the band-shaped dislocation-concentrated region at positions of 50 82 m from a center of the band-shaped dislocation-concentrated region in a lateral direction perpendicular to the longitudinal direction.