H10N 89/00
Integrated devices, or assemblies of multiple devices, comprising at least one bulk
Official title: Integrated devices, or assemblies of multiple devices, comprising at least one bulk negative resistance effect element covered by group H10N80/00
H10N89/00 (Integrated devices, or assemblies of multiple devices, comprising at least one bulk) appears on 25 US grants and 21 published applications in this corpus.
Search patents in H10N- Granted patents
- 25
- Published applications
- 21
- Assignees
- 22
- Inventors
- 64
- Latest grant
- 3 Feb 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 3 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 1 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 1 |
| 2011 | 0 | 1 |
| 2012 | 1 | 0 |
| 2013 | 1 | 2 |
| 2014 | 1 | 0 |
| 2015 | 1 | 1 |
| 2016 | 0 | 0 |
| 2017 | 0 | 2 |
| 2018 | 1 | 3 |
| 2019 | 4 | 2 |
| 2020 | 3 | 2 |
| 2021 | 2 | 1 |
| 2022 | 0 | 2 |
| 2023 | 2 | 1 |
| 2024 | 0 | 0 |
| 2025 | 1 | 0 |
| 2026 | 1 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Neuron and neuromorphic system including the same3 Feb 2026US 12,541,678 B2Industry-University Cooperation Foundation Hanyang University
- Elementary cell comprising a resistive memory and a device intended to form a selector, cell matrix, associated manufacturing and initialization methods1 Jul 2025US 12,349,370 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Oscillating element25 Apr 2023US 11,637,530 B2Canon Kabushiki Kaisha
- Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same14 Mar 2023US 11,605,674 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same1 Jun 2021US 11,024,674 B2National Taiwan University
- Gunn diodes for clock synchronization circuits19 Mar 2026US 2026/0082829 A1
- Gunn diodes with doped epitaxial regions19 Mar 2026US 2026/0082830 A1
- Elementary cell comprising a resistive memory and a device intended to form a selector, cell matrix, associated manufacturing and initialization methods16 Feb 2023US 2023/0047263 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Oscillating element18 Aug 2022US 2022/0263466 A1Canon Kabushiki Kaisha
- Neuron and neuromorphic system including the same24 Feb 2022US 2022/0058473 A1Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
Most cited
By later US patents
- Logic circuit including at least one resistor or one transistor having a saturable resistor field effect transistor structure13US 4,394,589 AThomson-CSF · 1983
- Semiconductor device9US 4,047,199 AAgency of Industrial Science and Technology · 1977
- Method of manufacturing a logic circuit including at least one field-effect transistor structure of the normally-off type and at least one saturable resistor6US 4,402,127 AThomason-CSF · 1983
- Scalable, stackable, and BEOL-process compatible integrated neuron circuit4US 10,541,274 B2HRL Laboratories, LLC · 2020
- Fet-teld combination with capacitively coupled output electrode means4US 4,145,624 ARCA Corporation · 1979