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US 10,541,274 B2Granted
Scalable, stackable, and BEOL-process compatible integrated neuron circuit
AssigneeHRL Laboratories, LLC
InventorWei Yi
Life of this patent
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Abstract
An integrated neuron circuit structure comprising at least one thin-film resistor, one Metal Insulator Metal capacitor and one Negative Differential Resistance device.
Claims24
An integrated neuron circuit structure comprising at least one thin-film resistor, one Metal Insulator Metal capacitor and one Negative Differential Resistance device;
- the structure further comprising:
- first and second thin-film resistors,
- first and second Metal Insulator Metal capacitors and first and second Negative Differential Resistance devices;
- an input node connected, through the first thin-film resistor, to a first intermediate node common to the first Metal Insulator Metal capacitor and the first Negative Differential Resistance device;
- said intermediate node being connected, through the second thin-film resistor, to a second intermediate node of the integrated circuit;
- said second intermediate node being common to the second Metal Insulator Metal capacitor and the second Negative Differential Resistance device;
- and
- an output node connected to the second intermediate node.
5 more elements
A method of manufacturing an integrated neuron circuit structure, using at least one thin-film resistor, one Metal Insulator Metal capacitor and one Negative Differential Resistance device;
- the method further comprising:
- forming said integrated neuron circuit structure first and second thin-film resistors, first and second Metal Insulator Metal capacitors and first and second Negative Differential Resistance devices;
- connecting an input node, through the first thin-film resistor, to a first intermediate node common to the first Metal Insulator Metal capacitor and the first Negative Differential Resistance device;
- connecting said first intermediate node, through the second thin-film resistor, to a second intermediate node of the integrated circuit;
- said second intermediate node being common to the second Metal Insulator Metal capacitor and the second Negative Differential Resistance device;
- and
- connecting an output node to the second intermediate node.
4 more elements
Dependencies are inferred from the claim text.