Elementary cell comprising a resistive memory and a device intended to form a selector, cell matrix, associated manufacturing and initialization methods
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorAnthonin Verdy
Life of this patent
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Abstract
An elementary cell includes a device and a non-volatile resistive memory mounted in a series, the device including an upper selector electrode, a lower selector electrode, a layer made up of a first active material, referred to as an active selecting layer, the device being intended to form a volatile selector; the memory including an upper memory electrode, a lower memory electrode, a layer made of at least a second active material, referred to as an active memory layer, the active selecting layer being in a conductive crystalline state and the memory being in a very strongly resistive state that is more resistive than the strongly resistive state of the memory.
Claims11
An elementary cell comprising a device and a non-volatile resistive memory connected in series, the device comprising:
- a selector upper electrode,
- a selector lower electrode,
- a layer made of a first active material forming an active selecting layer,
- said device being intended to form a volatile selector switching from a first resistive selector state to a second resistive selector state by applying a threshold voltage between the selector upper electrode and the selector lower electrode and switching back to the first resistive selector state as soon as a current flowing through it or a voltage across the selector upper electrode and the selector lower electrode becomes lower again than a holding current or voltage respectively, the first resistive selector state being more resistive than the second resistive selector state,
- said non-volatile resistive memory comprising:
- a memory upper electrode,
- a memory lower electrode,
- a layer made of at least one second active material forming an active memory layer,
- said non-volatile resistive memory switching from a first resistive memory state to a second resistive memory state by applying a voltage or a current between the memory upper electrode and the memory lower electrode,
- wherein said elementary cell is in a configuration in which, both, said active selecting layer is in a conductive crystalline state and said non-volatile resistive memory is in an initial resistive memory state, the initial resistive memory state being a state of the non-volatile resistive memory prior to first use of the elementary cell and being more resistive than the first resistive memory state and the second resistive memory state.
A method for initializing an elementary cell including (i) a device and (ii) a non-volatile resistive memory connected in series,
- the device including a selector upper electrode, a selector lower electrode, and a layer made of a first active material forming an active selecting layer, said device being intended to form a volatile selector switching from a first resistive selector state to a second resistive selector state by applying a threshold voltage between the selector upper electrode and the selector lower electrode and switching back to the first resistive selector state as soon as a current flowing through it or a voltage across the selector upper electrode and the selector lower electrode becomes lower again than a holding current or voltage respectively, the first resistive selector state being more resistive than the second resistive selector state,
- the non-volatile resistive memory including a memory upper electrode, a memory lower electrode, a layer made of at least one second active material forming an active memory layer, said non-volatile resistive memory switching from a first resistive memory state to a second resistive memory state by applying a voltage or a current between the memory upper electrode and the memory lower electrode,
- the method comprising:
- providing the elementary cell such that, both, said active selecting layer is in a conductive crystalline state and said non-volatile resistive memory is in an initial resistive memory state, the initial resistive memory state being a state of the non-volatile resistive memory prior to first use of the elementary cell and being more resistive than the first resistive memory state and the second resistive memory state, and
- applying an initialization current and a single voltage pulse having an intensity equal to a predetermined initialization voltage and predetermined fall time, between the memory upper electrode and the selector lower electrode.
Dependencies are inferred from the claim text.