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US 2026/0082829 A1Published application
Gunn diodes for clock synchronization circuits
OwnerAbhishek A. Sharma, Wilfred Gomes +1inventors
InventorsAbhishek A. Sharma, Wilfred Gomes, Tahir Ghani
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Abstract
Disclosed herein are clock synchronization circuits using Gunn diodes, and related integrated circuit (IC) structures, devices, and techniques. In one aspect, an IC structure includes a first transistor, a second transistor, a first Gunn diode coupled to the first transistor, a second Gunn diode coupled to the second transistor, and a third transistor coupled between the first Gunn diode and the second Gunn diode.
Claims20
An integrated circuit (IC) structure, comprising:
- a plurality of transistors comprising a first transistor, a second transistor, and a third transistor;
- a first Gunn diode coupled to the first transistor;
- and
- a second Gunn diode coupled to the second transistor, wherein the third transistor is coupled between the first Gunn diode and the second Gunn diode.
1 more element
An integrated circuit (IC) structure, comprising:
- a first layer comprising an elongated structure of a semiconductor material;
- a plurality of transistors comprising a first transistor, a second transistor, and a third transistor, wherein a channel region of the first transistor is in a first portion of the elongated structure, a channel region of the second transistor is in a second portion of the elongated structure, and a channel region of the third transistor is in a third portion of the elongated structure, wherein the third portion is between the first portion and the second portion;
- a second layer comprising a first Gunn diode coupled to the first transistor;
- and
- a second Gunn diode coupled to the second transistor.
2 more elements
An integrated circuit (IC) structure, comprising:
- two or more elongated structures of one or more semiconductor materials;
- a first transistor, a second transistor, and a third transistor, wherein a channel region of at least one of the first transistor, the second transistor, and the third transistor is in a portion of a first of the two or more elongated structures, and a channel region of another one of the first transistor, the second transistor, and the third transistor is in a portion of a second of the two or more elongated structures;
- a first Gunn diode having an electrode connected to a source region or a drain region of the first transistor;
- and
- a second Gunn diode having an electrode connected to a source region or a drain region of the second transistor.
2 more elements
Dependencies are inferred from the claim text.